FCPF190N60-F152

Description：MOSFET N-CH 600V 20.2A TO220F
Series：SuperFET® II
Mfr：onsemi
Package：Tube

SKU:db2891c823fe Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 20.2A TO220F
Series：SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF190N60-F152

Overview

The FCPF190N60-F152 is an N-channel enhancement-mode MOSFET from onsemi's SuperFET II series. It features a 600 V drain-source voltage rating and a continuous drain current of 20.2 A. The device has a maximum on-resistance of 199 mΩ at 10 V gate drive. Key electrical parameters include a typical gate charge of 57 nC, a threshold voltage range of 2.5 V to 3.5 V, and a maximum power dissipation of 39 W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Integrated fast recovery body diode for efficient switching performance
Low gate charge optimized for high-frequency operation
Enhanced thermal stability with low on-resistance

Applications

High-efficiency DC-DC converters
Power factor correction circuits
Isolated flyback power supplies

Procurement Notes

Verify the specific suffix F152 against the manufacturer datasheet to confirm package dimensions and marking details. Ensure the component meets RoHS compliance requirements for your target market. Check for end-of-life status or obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component when a 600 V rating and approximately 20 A current capacity are required in a TO-220-3 package. Consider the 199 mΩ on-resistance for conduction loss calculations. Evaluate the 57 nC gate charge against driver capabilities for switching frequency optimization.

Part Context

This part belongs to the SuperFET II family, which integrates a trench MOSFET with a fast body diode. The FCPF190N60-F152 variant specifically utilizes the TO-220-3 through-hole package. It is designed for general-purpose power switching applications requiring robust performance and reliability.