FCPF190N65FL1-F154

$4.49

Description：MOSFET N-CH 650V 20.6A TO220F-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube

SKU:0969e2083224 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 20.6A TO220F-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3055 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

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FCPF190N65FL1-F154

Overview

The FCPF190N65FL1-F154 is an N-Channel enhancement-mode MOSFET from the SUPERFET II family, utilizing super-junction charge balance technology. It features a 650 V drain-source voltage rating and a continuous drain current of 20.6 A at 25°C case temperature. The device exhibits a maximum on-resistance of 190 mΩ and a typical gate charge of 60 nC. Packaged in a TO-220F Ultra Narrow Lead (CASE 221BN) for through-hole mounting, it supports a junction temperature range of -55°C to +150°C.

Feature Summary

Super-junction architecture with charge balance technology for low conduction loss and superior switching performance.
Optimized body diode reverse recovery characteristics designed to remove additional components and improve system reliability.
High dv/dt capability and 100% avalanche testing for robust operation under extreme conditions.

Applications

Computing and display power supplies
Telecom and server power supplies
Industrial power supplies
Lighting, chargers, and adapters

Procurement Notes

Verify the specific ordering suffix '-F154' against the manufacturer's latest documentation to confirm shipping configuration details. Ensure that the TO-220F package dimensions align with the target PCB footprint requirements. Confirm compliance with RoHS standards and Pb-free status as specified in the official datasheet before finalizing procurement specifications.

Selection Notes

Select this component when high-voltage isolation and efficient thermal management are required in through-hole designs. The low effective output capacitance and optimized gate charge make it suitable for applications demanding miniaturization and higher efficiency. Evaluate the thermal resistance parameters relative to the expected ambient operating conditions to ensure safe junction temperatures.

Part Context

This part belongs to the SUPERFET II series, representing ON Semiconductor's high-voltage super-junction MOSFET family. The FRFET designation indicates optimized reverse recovery performance of the integrated body diode. The product utilizes advanced silicon technology to minimize both conduction and switching losses compared to conventional planar structures.