FCPF290N80

Overview

The FCPF290N80 is an N-Channel SuperFET II MOSFET manufactured by Fairchild Semiconductor, now part of onsemi. It utilizes high-voltage super-junction charge balance technology to achieve low on-resistance and fast switching characteristics. The device features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 17 A at case temperature. It has a maximum on-state resistance (Rds(on)) of 290 mΩ. The component is housed in a TO-220F through-hole package with an isolated flange, designed for thermal efficiency in power conversion applications.

Feature Summary

• SuperFET II super-junction technology for optimized performance
• High voltage capability suitable for hard-switching applications
• Low on-state resistance reducing conduction losses
• Through-hole mounting for robust mechanical connection

Applications

• High-voltage hard-switching power supplies
• Industrial motor drives
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the manufacturer designation carefully, as Fairchild Semiconductor's discrete semiconductor division was acquired by onsemi. Ensure the datasheet revision matches the production batch requirements. Confirm the package variant corresponds to the TO-220F full pack specification. Check for RoHS compliance status if required by specific environmental regulations. Validate authenticity through authorized distribution channels to avoid counterfeit components.

Selection Notes

Select this component when designing circuits requiring high blocking voltage above standard silicon limits. The 800 V rating provides safety margin for inductive loads. Consider the 17 A current rating relative to thermal management capabilities in the final assembly. The TO-220F package allows direct mounting to heatsinks via the isolated tab. Evaluate gate charge specifications against driver capabilities for optimal switching speed.

Part Context

This device belongs to the SuperFET II family, representing an evolution in high-voltage MOSFET design. The series integrates advanced trench gate and super-junction structures to minimize figure-of-merit metrics. It serves as a replacement for older generation planar MOSFETs in demanding power electronics. The transition from Fairchild to onsemi branding affects documentation sources but not the underlying silicon architecture.

Replacement Considerations

• FCPF290N80