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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A TO220F
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：31W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3
- Package / Case：TO-220-3 Full Pack
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Overview
The FCPF7N60T is a single N-channel SuperFET MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It features a 600 V drain-source breakdown voltage and supports a continuous drain current of 7 A. The device utilizes silicon technology in a TO-220F-3 through-hole package. Key electrical characteristics include a maximum on-resistance of 530 mΩ at room temperature, a gate threshold voltage of 3 V, and a total gate charge of 30 nC. It operates within a junction temperature range of -55 °C to +150 °C with a power dissipation rating of 83 W.
Feature Summary
- SuperFET technology integrates logic-level gate drive with low on-resistance for enhanced efficiency.
- Optimized switching performance reduces dynamic losses during turn-on and turn-off transitions.
- Robust avalanche capability ensures reliability under transient overvoltage conditions.
Applications
- High-frequency switch-mode power supplies
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing. Confirm the TO-220F-3 insulation class matches thermal management requirements. Cross-reference datasheet revisions to ensure parameter consistency. Validate RoHS compliance status for target markets. Ensure ordering codes align with distributor inventory standards.
Selection Notes
Select this component for designs requiring 600 V isolation with moderate current handling. The TO-220F-3 package facilitates easy mounting on heatsinks for thermal regulation. Consider the 530 mΩ on-resistance for conduction loss calculations. Evaluate gate charge requirements against driver capabilities for optimal switching speed.
Part Context
This part belongs to onsemi’s SuperFET family, which combines trench MOSFET cells with integrated gate drive logic. The series targets general-purpose power switching where efficiency and cost-effectiveness are critical. It serves as a discrete solution for medium-power applications in industrial and consumer electronics.
Replacement Considerations
Direct substitutes include FCP7N60 (TO-220) and FCD7N60TM_WS (DPAK). Verify pinout compatibility and thermal resistance differences before substitution. Ensure voltage and current ratings meet or exceed original design specifications.
