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Product Detailed Parameters
- Description：MOSFET N-CH 800V 2A IPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：9.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：32W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The FCU3400N80Z is an N-channel enhancement mode MOSFET from onsemi's SuperFET II series. It features a maximum drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 2 A. The device has a maximum on-resistance (Rds(on)) of 3.4 Ω and operates in the IPAK package with through-hole mounting. Key electrical parameters include a typical gate charge (Qg) of 43 nC at specified Vgs, a forward voltage (Vf) of 1.2 V, and a maximum power dissipation (Pd) of 32 W to 35.7 W depending on source documentation. It supports a junction temperature range from -55°C to 150°C or 175°C.
Feature Summary
- SuperFET II technology for optimized switching performance
- High voltage capability suitable for robust power applications
- Through-hole IPAK package for reliable thermal management
Applications
- Industrial power supplies
- Motor control systems
- General purpose switching applications
Procurement Notes
Verify the specific datasheet version when ordering, as sources indicate variations in maximum power dissipation ratings (32W vs 35.7W) and operating temperature limits. Confirm the package style is IPAK and ensure the application circuit supports the 3.4 ohm on-resistance characteristics. Cross-reference part numbers carefully to distinguish between similar SuperFET II devices.
Selection Notes
Select this component for low-current, high-voltage switching tasks where through-hole assembly is required. The 800V rating provides significant headroom for industrial line voltages. Consider the 3.4 ohm Rds(on) for efficiency calculations in low-amperage circuits. Ensure thermal design accommodates the IPAK package's heat dissipation capabilities within the specified temperature range.
Part Context
Part of onsemi's SuperFET II family, designed for high-efficiency power switching. This N-channel MOSFET targets applications requiring high breakdown voltage with moderate current handling. The IPAK package offers a balance between performance and ease of manual or automated through-hole placement compared to surface-mount alternatives.
Replacement Considerations
Check for direct substitutes within the SuperFET II lineup that match the 800V/2A/IPAK specifications. Verify pinout compatibility and thermal resistance values before substituting with other manufacturers' 800V N-channel MOSFETs in the IPAK form factor.
