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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR
- Series：SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1315 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
FCU850N80Z is an N-Channel SuperFET II MOSFET from Fairchild Semiconductor, utilizing charge balance technology for low on-resistance and gate charge. Key electrical parameters include a drain-source voltage (VDSS) of 800V, a continuous drain current (ID) of 6.3A at 100°C, and a typical on-resistance (RDS(on)) of 850 mΩ. The device features ultra-low gate charge (Qg = 27 nC), low output capacitance energy (Eoss = 2.8 μJ @ 400V), and effective output capacitance (Coss(eff.) = 124 pF). It is 100% avalanche tested and includes an internal gate-source ESD diode capable of withstanding over 2 kV HBM stress.
Feature Summary
- SuperFET II technology minimizes conduction loss and switching energy through charge balance design.
- Internal gate-source ESD diode enhances electrostatic discharge protection beyond standard limits.
- Optimized for high efficiency in hard-switching applications via low gate charge and fast dv/dt capabilities.
Applications
- AC-DC power supplies
- LED lighting drivers
- Industrial power systems
Procurement Notes
Verify the exact part number suffix against official manufacturer documentation to ensure correct package and temperature rating specifications. Confirm RoHS compliance status as required by your assembly process. Cross-reference ordering codes with updated Fairchild or ON Semiconductor catalogs due to potential naming conventions changes following corporate mergers.
Selection Notes
Select this component for high-voltage applications requiring low switching losses and robust avalanche ruggedness. Ensure the thermal management design accommodates the specified power dissipation ratings under operating conditions. Verify that the gate drive voltage aligns with the threshold requirements for optimal RDS(on) performance without exceeding maximum ratings.
Part Context
The FCU850N80Z belongs to the SuperFET II family, representing an evolution in high-voltage MOSFET technology. This series integrates the power JFET and MOSFET structures into a single chip, reducing parasitic effects. Fairchild Semiconductor developed this line to address efficiency demands in modern power conversion topologies, later continuing under ON Semiconductor branding.
Replacement Considerations
Check for direct equivalents within the SuperFET II lineup such as FCP series devices with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting. Consult official cross-reference guides for any updated part numbers reflecting manufacturing transitions.
