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Product Detailed Parameters
- Description：IGBT MOD 600V 400A 940W
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：400 A
- Power - Max：940 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：19 nF @ 25 V
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Overview
The FD300R06KE3HOSA1 is a single IGBT module from the 62mm C-Series, utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled 3 diode. It features a collector-emitter voltage (VCES) of 600 V and a continuous DC collector current (ICDC) of 300 A at TC = 70°C. The repetitive peak collector current (ICRM) reaches 600 A for 1 ms pulses. At Tvj = 25°C, the collector-emitter saturation voltage (VCEsat) is typically 1.45 V. The gate-emitter peak voltage (VGES) is rated at +/-20 V. Thermal resistance from junction to case is 0.160 K/W per IGBT and 0.320 K/W per diode. Operating temperature ranges from -40°C to +150°C.
Feature Summary
- Incorporates Trench/Fieldstop IGBT3 technology with Emitter Controlled 3 diodes for high robustness.
- Features an isolated base plate constructed with copper material and Al2O3 internal insulation.
- Provides 2.5 kV AC isolation capability for one minute at 50 Hz.
- Includes an integrated NTC thermistor for precise thermal monitoring.
Applications
- Chopper applications
- 3-level applications
Procurement Notes
Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm exact manufacturing specifications. Ensure compliance with RoHS directives as indicated in datasheets. Confirm that the component meets the required isolation standards for your specific circuit design before procurement.
Selection Notes
Select this module for designs requiring high short-circuit robustness and low switching losses. Verify that the thermal management system can handle the specified RthJC values. Ensure the gate drive circuit supports the recommended +/-15 V operation and accounts for the internal gate resistor characteristics.
Part Context
This component belongs to the Infineon 62mm C-Series, designed for industrial power conversion. It utilizes silicon-based IGBT3 technology optimized for efficiency. The module integrates both the switch and anti-parallel diode into a single compact housing suitable for screw mounting.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Generic replacements may not match the specific Trench/Fieldstop characteristics or thermal performance. Verify pinout compatibility and electrical ratings before substitution.
