FD800R17HP4KB2BOSA2

Overview

The FD800R17HP4KB2BOSA2 is an IGBT module with a chopper configuration, rated at 1700 V and 800 A continuous collector current. It features a maximum repetitive peak collector current of 1600 A and total power dissipation of 5200 W. The typical collector-emitter saturation voltage is 2.25 V at 800 A. The module utilizes the IHM-B housing with an AlSiC base plate for enhanced thermal cycling capability. It provides 4 kV AC insulation and operates within a junction temperature range of -40°C to 150°C.

Feature Summary

• AlSiC base plate construction for increased thermal cycling capability
• High power density design in IHM-B housing
• Extended operating junction temperature up to 150°C
• Low collector-emitter saturation voltage

Applications

• Chopper applications
• High-power converters
• Traction drives
• Wind turbines

Procurement Notes

Verify component authenticity by checking the UL approval mark (E83335) and comparing the barcode content against the official module label code structure. Ensure that the material number and production order number digits align with Infineon's standard coding practices. Confirm compliance with RoHS directives before finalizing procurement orders.

Selection Notes

Select this module for high-power chopper topologies requiring robust thermal performance. The AlSiC base plate supports demanding thermal cycling conditions. Verify that the system can accommodate the 4 kV isolation requirements and that the mounting torque specifications for M6 and M4/M8 terminals are strictly followed during assembly.

Part Context

This component belongs to the IHM-B series of high-power IGBT modules from Infineon Technologies. It is designed for industrial and traction environments where high reliability and power density are critical. The module integrates both IGBT and diode switches into a single package for efficient power conversion.

Replacement Considerations

Public confirmed substitute part numbers: None available.