SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FD900R12IP4D is a PrimePACK™2 IGBT module featuring Trench/Fieldstop IGBT4 technology and an enlarged Emitter Controlled 4 diode. It provides a collector-emitter voltage of 1200 V and a continuous DC collector current of 900 A at 100°C case temperature. The device supports a repetitive peak collector current of 1800 A and has a total power dissipation of 5.1 kW. Typical saturation voltages are 1.70 V for the IGBT and 1.65 V for the diode at 25°C. Thermal resistance from junction to case is 29.5 K/kW for the IGBT and 37.0 K/kW for the diode. The module includes an NTC thermistor with a nominal resistance of 5.0 kΩ at 25°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration, as suffixes may indicate variations in packaging or internal components. Confirm RoHS compliance status and material content details through the manufacturer's official product qualification reports before finalizing procurement specifications.
Select this module for chopper circuits requiring high current density and robust short-circuit performance. Ensure the cooling system design accounts for the specified thermal resistances and that gate drive parameters match the recommended ±15 V levels. Verify that the application voltage does not exceed the 1200 V rating under all transient conditions.
This component belongs to the Infineon PrimePACK™2 series utilizing Trench/Fieldstop IGBT4 technology. It is designed for industrial applications demanding high power density and reliability. The module integrates an enlarged diode to improve reverse recovery characteristics compared to standard configurations.
Public confirmed substitute part numbers: None identified.