FET, MOSFET Arrays FDC6302P product image

FDC6302P

$0.19
  • Description:MOSFET 2P-CH 25V 0.12A SSOT6
  • Series:-

SKU:f868899c13b3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

FDC6302P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 25V 0.12A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6302P

  • Description:MOSFET 2P-CH 25V 0.12A SSOT6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:120mA
  • Rds On (Max) @ Id, Vgs:10Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:11pF @ 10V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDC6302P

FDC6302P

FET, MOSFET Arrays Overview

The FDC6302P is a single P-Channel PowerTrench MOSFET manufactured by onsemi. It features a 20 V drain-source breakdown voltage and a continuous drain current of 5.5 A. The device exhibits a maximum on-resistance of 35 mΩ at a gate-source voltage of -4.5 V. It operates with a gate-source voltage range of ±12 V and has a typical threshold voltage of 1.5 V. The total gate charge is 20 nC, with rise and fall times of 11 ns each. The component supports surface-mount installation in an SSOT-6 package, handles up to 1.6 W power dissipation, and functions within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • PowerTrench technology for optimized low on-resistance performance
  • Enhancement mode operation suitable for logic-level control
  • High thermal stability with extended junction temperature capability

FET, MOSFET Arrays Applications

  • Low-side switching in DC-DC converter circuits
  • Load switch applications for portable electronics
  • Power management modules requiring compact footprint

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives if required for the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a 20 V P-Channel MOSFET with 5.5 A current capacity is required in an SSOT-6 package. The 35 mΩ on-resistance makes it suitable for low-voltage, high-efficiency power paths. Consider the 20 nC gate charge for driving capabilities in moderate-speed switching applications.

FET, MOSFET Arrays Part Context

The FDC6302P belongs to onsemi's PowerTrench family of single N- and P-Channel MOSFETs. This series focuses on delivering low RDS(on) in small surface-mount packages. It complements other devices in the lineup designed for efficient power management in consumer and industrial equipment.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 20 V rating, 5.5 A current, SSOT-6 package, and electrical characteristics defined in the FDC6302P datasheet.

FDC6302PFDC6302P
$0.19
Buy Now