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FDC6302P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 25V 0.12A SSOT6. Review the specifications below when checking this part for your BOM.
The FDC6302P is a single P-Channel PowerTrench MOSFET manufactured by onsemi. It features a 20 V drain-source breakdown voltage and a continuous drain current of 5.5 A. The device exhibits a maximum on-resistance of 35 mΩ at a gate-source voltage of -4.5 V. It operates with a gate-source voltage range of ±12 V and has a typical threshold voltage of 1.5 V. The total gate charge is 20 nC, with rise and fall times of 11 ns each. The component supports surface-mount installation in an SSOT-6 package, handles up to 1.6 W power dissipation, and functions within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the official datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives if required for the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a 20 V P-Channel MOSFET with 5.5 A current capacity is required in an SSOT-6 package. The 35 mΩ on-resistance makes it suitable for low-voltage, high-efficiency power paths. Consider the 20 nC gate charge for driving capabilities in moderate-speed switching applications.
The FDC6302P belongs to onsemi's PowerTrench family of single N- and P-Channel MOSFETs. This series focuses on delivering low RDS(on) in small surface-mount packages. It complements other devices in the lineup designed for efficient power management in consumer and industrial equipment.
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 20 V rating, 5.5 A current, SSOT-6 package, and electrical characteristics defined in the FDC6302P datasheet.
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