FDC6310P

FET, MOSFET Arrays Overview

The FDC6310P is a dual-channel P-Channel MOSFET from the PowerTrench series, manufactured by onsemi. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.2A at 25°C. The device offers a maximum on-resistance (Rds(on)) of 125mΩ at Vgs=4.5V and Id=2.2A, with a gate threshold voltage (Vgs(th)) maximum of 1.5V at 250µA. Key electrical parameters include a maximum gate charge (Qg) of 5.2nC at 4.5V and input capacitance (Ciss) of 337pF at 10V. It supports a power dissipation of 700mW and operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual-channel configuration for space-efficient circuit design
• Logic-level gate drive capability for low-voltage control applications
• SuperSOT-6 surface-mount package for compact PCB integration

FET, MOSFET Arrays Applications

• Battery protection circuits in portable devices
• Load switching in consumer electronics
• Power management modules requiring dual P-channel isolation

FET, MOSFET Arrays Procurement Notes

Verify manufacturer part number authenticity against official onsemi documentation. Confirm package type matches SuperSOT-6 specifications. Check datasheet revisions for parameter updates. Ensure storage conditions comply with moisture sensitivity level requirements. Validate supplier authorization status before purchase.

FET, MOSFET Arrays Selection Notes

Select based on required channel count and voltage rating. Verify Rds(on) meets efficiency targets at intended operating current. Confirm gate drive voltage compatibility with logic levels. Assess thermal performance against available PCB copper area for heat dissipation. Compare package dimensions against layout constraints.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench MOSFET family, designed for general-purpose switching applications. The FDC6310P specifically addresses needs for dual-channel P-channel solutions in compact form factors. It complements single-channel variants by providing integrated dual functionality without increasing footprint significantly.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match dual P-channel topology, 20V Vdss, and SuperSOT-6 package. Verify equivalent Rds(on) and Qg values for similar switching performance. Cross-reference pinout configurations to ensure compatibility.