FET, MOSFET Arrays FDC6327C product image

FDC6327C

$1.09
  • Description:MOSFET N/P-CH 20V 2.7A SSOT6
  • Series:PowerTrench®

SKU:96fa001d15d3 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

FDC6327C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 2.7A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6327C

  • Description:MOSFET N/P-CH 20V 2.7A SSOT6
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.7A, 1.9A
  • Rds On (Max) @ Id, Vgs:80mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:325pF @ 10V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDC6327C

FDC6327C

FET, MOSFET Arrays Overview

The FDC6327C is a dual N- and P-channel MOSFET manufactured by onsemi using the PowerTrench process. It operates with a drain-source voltage of ±20 V. The N-channel device supports a continuous drain current of 2.7 A with an on-resistance of 0.08 Ω at 4.5 V gate drive, while the P-channel device handles -1.6 A with 0.17 Ω resistance under similar conditions. Total gate charge reaches 4.5 nC for the N-channel and 4.0 nC for the P-channel. Input capacitance measures 325 pF. The component functions within a junction temperature range of -55°C to +150°C and is housed in a TSOT-23-6 package.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating independent N-channel and P-channel transistors within a single compact footprint.
  • PowerTrench technology designed to minimize on-state resistance while maintaining low gate charge for efficient switching.
  • SUPERSOT-6 package provides a small form factor that is significantly smaller than SO-8 alternatives.

FET, MOSFET Arrays Applications

  • DC/DC Converter circuits
  • Load Switch applications
  • Motor Driving systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent Product Change Notices regarding marking or assembly variations before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints preclude larger packages like SO-8 or TSSOP-8. Evaluate thermal resistance requirements based on the specific copper pad area used on the PCB, as junction-to-ambient resistance varies significantly with mounting surface dimensions.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs from onsemi. It serves as a high-performance solution for low-voltage switching applications where minimizing board space and power loss are critical design priorities.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

FDC6327CFDC6327C
$1.09
Buy Now