FDC6420C

$0.85

Description：MOSFET N/P-CH 20V 3A/2.2A SSOT6
Series：PowerTrench®

SKU:c58ccd4247a7 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDC6420C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 3A/2.2A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6420C

Description：MOSFET N/P-CH 20V 3A/2.2A SSOT6
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3A, 2.2A
Rds On (Max) @ Id, Vgs：70mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：324pF @ 10V
Power - Max：700mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：SuperSOT™-6
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDC6420C

FDC6420C

FET, MOSFET Arrays Overview

The FDC6420C is a dual-channel, isolated enhancement-mode MOSFET from onsemi's PowerTrench series. It integrates one N-channel and one P-channel transistor in a compact SSOT-6 surface-mount package. The device features a drain-source voltage rating of 20V for both channels. The N-channel offers a continuous drain current of 3A with an on-resistance of 70mΩ at VGS=4.5V. The P-channel provides a continuous drain current of 2.2A with an on-resistance of 190mΩ at VGS=-2.5V. Operating temperatures range from -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

PowerTrench technology minimizes on-state resistance while maintaining superior switching performance.
SuperSOT-6 package provides a small footprint that is significantly smaller than SO-8 alternatives.
Low gate charge characteristics support efficient high-speed switching applications.

FET, MOSFET Arrays Applications

Battery protection circuits
Power management systems
Signal switching interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm exact packaging options such as tape and reel or cut tape quantities. Confirm RoHS compliance status through official documentation before integration into regulated assemblies. Ensure the component source is traced directly to onsemi or authorized distributors to prevent counterfeit risks.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require a dual N/P configuration in a minimal outline package. The low RDS(ON) values make it suitable for load switch applications where efficiency is critical. Verify that the 20V voltage rating aligns with the system's maximum operating conditions and transient spikes.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family, which utilizes advanced trench gate technology for discrete semiconductors. The FDC6420C specifically addresses the need for integrated dual-channel solutions in portable electronics and battery-powered devices where board real estate is limited.