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FDC6561AN is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 2.5A SSOT6. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDC6561AN
- Description：MOSFET 2N-CH 30V 2.5A SSOT6
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.5A
- Rds On (Max) @ Id, Vgs：95mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：220pF @ 15V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：SuperSOT™-6
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDC6561AN
FET, MOSFET Arrays Overview
The FDC6561AN is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. This component integrates two independent MOSFETs within a single surface-mount package, designed for high-speed switching applications. It features low on-resistance and fast switching characteristics suitable for power management circuits. The device operates with a drain-source voltage rating of 20V and supports continuous drain current capabilities appropriate for portable electronics. Its compact form factor facilitates efficient board space utilization in consumer devices requiring multiple low-voltage switching functions.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for integrated switching solutions
- Low on-resistance for improved power efficiency
- Fast switching speeds for high-frequency operation
FET, MOSFET Arrays Applications
- Portable electronic devices
- Power management modules
- Consumer electronics battery protection circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications. Confirm that the component matches the required thermal performance and electrical ratings for the target application environment. Cross-reference the manufacturer's latest datasheet to validate pinout compatibility and absolute maximum ratings before integration into final designs.
FET, MOSFET Arrays Selection Notes
Select this component when dual N-channel switching is required in a compact footprint. Evaluate the total power dissipation requirements against the package thermal resistance. Ensure the gate drive voltage aligns with the threshold characteristics specified in the official documentation. Consider the parasitic capacitance values if operating at high frequencies to maintain signal integrity.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's portfolio of small-signal MOSFETs designed for general-purpose switching. It serves as a solution for applications needing multiple low-voltage switches in limited space. The device complements other components in power distribution networks within mobile and handheld devices.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for compatible dual N-channel MOSFETs with matching voltage and current ratings. Verify pin-to-pin compatibility and electrical parameter equivalence before replacing the original component in existing designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
