FDD8424H-F085A

FET, MOSFET Arrays Overview

The FDD8424H-F085A is a dual N-channel and P-channel PowerTrench MOSFET manufactured by onsemi. It features a TO-252-5 (DPAK) surface-mount package with four terminals and one tab. The device supports a drain-source voltage of 40V, with continuous drain currents rated at 9A for the N-channel and 6.5A for the P-channel. On-resistance values are specified at 24 mΩ for the N-channel and 54 mΩ for the P-channel. Gate-source voltage limits are ±20V, with threshold voltages ranging from 1V to 3V. Total gate charge is approximately 20nC for the N-channel and 24nC for the P-channel. Operating temperatures span from -55°C to +150°C, with power dissipation rated at 3.1W.

FET, MOSFET Arrays Feature Summary

• Combines complementary N-channel and P-channel transistors in a single compact package for space-constrained designs.
• Utilizes shielded gate technology to achieve low on-resistance while maintaining minimal gate charge for efficient switching.
• Features soft body diode characteristics to reduce voltage spikes during synchronous rectification applications.

FET, MOSFET Arrays Applications

• Synchronous rectification in AC/DC power supplies
• Low-voltage DC/DC converter circuits
• Load switch implementations requiring complementary control

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'F085A' against official manufacturer documentation to confirm tape-and-reel specifications and packaging details. Ensure component authenticity through authorized distribution channels. Confirm RoHS and REACH compliance status prior to integration into final assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when a dual complementary MOSFET solution is required for 40V logic-level applications. Evaluate thermal management requirements given the 3.1W power dissipation limit in the DPAK package. Compare total gate charge and on-resistance products against alternative devices to optimize efficiency in high-frequency switching environments.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of mid-voltage MOSFETs designed for optimized performance metrics. The dual configuration simplifies bill-of-materials and PCB layout compared to using separate discrete N and P-channel devices. It represents an evolution in silicon-based power switching technology focusing on figure-of-merit improvements.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible replacements within the same series should be verified via official substitution guides. Cross-reference electrical parameters such as Rds(on) and Qg to ensure equivalent performance in existing circuit designs without modifying board layout.