FDG6301N

FET, MOSFET Arrays Overview

The FDG6301N is a dual N-channel power MOSFET manufactured by onsemi, housed in an SC-70-6 surface-mount package. It features a drain-source breakdown voltage of 25 V and a continuous drain current of 220 mA. The device exhibits a maximum on-resistance of 4 ohms at the gate-source voltage threshold. Gate-source voltage limits are defined between -8 V and +8 V, with a typical threshold voltage of 650 mV. Total gate charge is specified at 400 pC. The component supports an operating temperature range from -55 °C to +150 °C and has a power dissipation rating of 300 mW.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a compact SC-70-6 footprint for space-constrained designs
• Silicon technology construction ensuring reliable switching performance
• Wide thermal operating range suitable for demanding environments

FET, MOSFET Arrays Applications

• Battery-powered portable electronics
• Low-voltage signal switching circuits
• Consumer device power management

FET, MOSFET Arrays Procurement Notes

Verify availability status as the component may be discontinued or subject to limited distribution channels. Confirm RoHS compliance documentation directly with the manufacturer or authorized distributors before integration into production schedules. Ensure the specific ordering suffix matches the required packaging format for assembly line compatibility.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low-voltage switching with minimal current demands. Evaluate the 4-ohm on-resistance against total power loss requirements in the target circuit. Consider the small SC-70-6 package dimensions when determining PCB layout constraints and thermal dissipation capabilities relative to the 300 mW power rating.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of discrete power semiconductors designed for general-purpose switching. It utilizes standard silicon planar technology optimized for cost-effective mass production. The dual-channel architecture allows for independent control of two loads within a single package, reducing overall system component count compared to using separate single-channel devices.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers. Consult official cross-reference databases for potential equivalents that match the SC-70-6 package and 25 V rating specifications.