FDG6308P

FET, MOSFET Arrays Overview

The FDG6308P is a P-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an SOT-363 (SC-70) surface-mount package. It features a drain-source breakdown voltage of 20 V and a continuous drain current of 500 mA. The device exhibits a maximum on-resistance of 1.2 Ω at a gate-source voltage of -4.5 V. Gate-source voltage limits are rated at ±12 V, with a typical threshold voltage of 0.65 V. Operating temperatures range from -55 °C to +150 °C, with a power dissipation capacity of 300 mW.

FET, MOSFET Arrays Feature Summary

• PowerTrench technology for optimized low on-resistance performance
• Enhancement mode operation suitable for logic-level switching applications
• Compact six-pin SOT-363 footprint for space-constrained designs

FET, MOSFET Arrays Applications

• Low-side load switching in portable consumer electronics
• Battery protection circuits requiring compact form factors
• General-purpose signal routing in mobile devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm exact electrical tolerances and packaging options. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status matches project requirements before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a single P-channel switch with moderate current handling is required in a minimal footprint. Compare on-resistance values against system voltage drops to ensure efficiency targets are met. Verify that the thermal dissipation capabilities align with the expected ambient operating conditions and PCB copper area available for heat spreading.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of discrete MOSFETs designed for efficient power management. The SOT-363 package provides a dual-transistor compatible outline, though this specific unit functions as a single channel. It serves as a compact alternative to larger packages for low-power switching tasks in handheld and wearable technologies.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other 20V P-channel MOSFETs in SOT-363 packages such as the FDG6318P or FDN308P, provided pin compatibility and electrical parameters like Rds(on) and Id are verified against the original design constraints.