FDG6320C

FET, MOSFET Arrays Overview

The FDG6320C is a dual N/P-channel enhancement mode MOSFET manufactured by onsemi, housed in a surface-mount SOT-363 (SC-70) package with six pins. The device integrates two isolated transistors within a compact silicon structure measuring 2mm x 1.25mm x 1mm. It supports a maximum drain-source voltage of 25V and operates across a temperature range from -55°C to +150°C. Key electrical parameters include a maximum continuous drain current of 140 mA for the N-channel and 220 mA for the P-channel. The typical on-resistance values are 4Ω for the N-channel and 10Ω for the P-channel. Maximum power dissipation is rated at 300 mW, with a maximum gate-source voltage of ±8V.

FET, MOSFET Arrays Feature Summary

• Dual transistor configuration integrating both N-channel and P-channel enhancement mode MOSFETs into a single compact component.
• Surface-mount design utilizing the SOT-363 package to facilitate automated assembly and space-constrained circuit layouts.
• High thermal stability capability allowing operation up to a junction temperature of +150°C.

FET, MOSFET Arrays Applications

• Battery protection circuits requiring compact dual-switch solutions
• Load switching applications in portable electronic devices
• Low-voltage signal routing and isolation

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct binning and packaging specifications. Confirm RoHS compliance status through the supplier's declaration documents prior to integration. Ensure the procurement channel provides traceability documentation matching the original equipment manufacturer's standards for quality assurance.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N/P-channel configuration is required in a minimal footprint SOT-363 package. Evaluate the 4Ω and 10Ω on-resistance values against the specific load current requirements to ensure acceptable power dissipation within the 300 mW limit. Consider the 25V breakdown voltage as the upper operational boundary for the target application circuit.

FET, MOSFET Arrays Part Context

This part belongs to the onsemi discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for low-power switching applications where space efficiency is critical. The SOT-363 package is standard for dual-transistor implementations in consumer electronics and mobile hardware designs.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers were not identified in the provided source material. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers or generic equivalents.