FET, MOSFET Arrays FDG6322C product image

FDG6322C

$0.60
  • Description:MOSFET N/P-CH 25V 0.22A SC88
  • Series:-

SKU:282fd2ad50db Category: Brand:

  
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FDG6322C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 25V 0.22A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6322C

  • Description:MOSFET N/P-CH 25V 0.22A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:220mA, 410mA
  • Rds On (Max) @ Id, Vgs:4Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG6322C

FDG6322C

FET, MOSFET Arrays Overview

The FDG6322C is an N/P-channel enhancement mode MOSFET pair from onsemi, housed in a surface-mount SOT-363 (SC-70) package with six pins. It features a maximum drain-source voltage of 25 V and two isolated channels within a single die. The N-channel exhibits a maximum continuous drain current of 220 mA and a maximum on-resistance of 1.9 Ω, while the P-channel supports 410 mA with a resistance of 7 Ω. Typical gate charges are 0.29 nC at 4.5 V for the N-channel and 1.1 nC at 5 V for the P-channel. The device operates between -55 °C and +150 °C with a power dissipation rating of 300 mW.

FET, MOSFET Arrays Feature Summary

  • Dual-channel configuration integrating separate N-channel and P-channel enhancement mode transistors in a compact footprint.

FET, MOSFET Arrays Applications

  • Battery protection circuits requiring dual polarity switching.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'C' against the manufacturer's official datasheet to confirm pinout orientation and electrical tolerances. Ensure the ordering part number matches the exact package variant required for the PCB layout. Confirm RoHS compliance status through the supplier's certificate of conformity prior to final procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-switch solution is needed for low-voltage applications. The SOT-363 package suits space-constrained designs. Verify that the 25 V voltage rating and current capabilities align with the specific load requirements. Check thermal management needs given the 300 mW power dissipation limit in the small outline package.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's portfolio of small-signal MOSFETs designed for portable electronics. The SOT-363 package provides a high-density mounting option compared to larger discrete packages. It serves as a complementary pair for logic-level switching tasks where minimal board area is critical.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with FDC6321C or FDG6320C only if electrical parameters and pin configurations are verified identical. Ensure any substitute maintains the same SOT-363 footprint and voltage ratings.

FDG6322CFDG6322C
$0.60
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