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FDG6322C is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 25V 0.22A SC88. Review the specifications below when checking this part for your BOM.
The FDG6322C is an N/P-channel enhancement mode MOSFET pair from onsemi, housed in a surface-mount SOT-363 (SC-70) package with six pins. It features a maximum drain-source voltage of 25 V and two isolated channels within a single die. The N-channel exhibits a maximum continuous drain current of 220 mA and a maximum on-resistance of 1.9 Ω, while the P-channel supports 410 mA with a resistance of 7 Ω. Typical gate charges are 0.29 nC at 4.5 V for the N-channel and 1.1 nC at 5 V for the P-channel. The device operates between -55 °C and +150 °C with a power dissipation rating of 300 mW.
Verify the specific suffix 'C' against the manufacturer's official datasheet to confirm pinout orientation and electrical tolerances. Ensure the ordering part number matches the exact package variant required for the PCB layout. Confirm RoHS compliance status through the supplier's certificate of conformity prior to final procurement decisions.
Select this component when a compact dual-switch solution is needed for low-voltage applications. The SOT-363 package suits space-constrained designs. Verify that the 25 V voltage rating and current capabilities align with the specific load requirements. Check thermal management needs given the 300 mW power dissipation limit in the small outline package.
This component belongs to onsemi's portfolio of small-signal MOSFETs designed for portable electronics. The SOT-363 package provides a high-density mounting option compared to larger discrete packages. It serves as a complementary pair for logic-level switching tasks where minimal board area is critical.
Cross-reference with FDC6321C or FDG6320C only if electrical parameters and pin configurations are verified identical. Ensure any substitute maintains the same SOT-363 footprint and voltage ratings.
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