FET, MOSFET Arrays FDG8850NZ product image

FDG8850NZ

$0.71
  • Description:MOSFET 2N-CH 30V 0.75A SC88
  • Series:PowerTrench®

SKU:764425c56527 Category: Brand:

  
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FDG8850NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 0.75A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG8850NZ

  • Description:MOSFET 2N-CH 30V 0.75A SC88
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:750mA
  • Rds On (Max) @ Id, Vgs:400mOhm @ 750mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:120pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG8850NZ

FDG8850NZ

FET, MOSFET Arrays Overview

The FDG8850NZ is a dual N-channel PowerTrench MOSFET manufactured by onsemi, designed for high-efficiency synchronous rectification and power conversion applications. This component integrates two independent MOSFETs within a single package to minimize thermal resistance and reduce board space requirements. The device utilizes advanced trench gate technology to achieve low on-resistance and fast switching speeds, which are critical for reducing conduction and switching losses in modern power supplies. It is housed in a compact surface-mount package suitable for automated assembly processes.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for integrated synchronous rectification
  • Advanced PowerTrench trench gate technology for enhanced efficiency
  • Low thermal resistance design for effective heat dissipation
  • Optimized for high-frequency switching operations

FET, MOSFET Arrays Applications

  • Synchronous rectification in DC-DC converters
  • High-efficiency AC-DC power supply adapters
  • Point-of-load (POL) voltage regulation modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your manufacturing requirements. Confirm RoHS compliance status and material composition declarations through official onsemi documentation prior to integration. Check for any product change notifications that may affect pinout or electrical characteristics. Ensure the supplier provides valid certificates of conformity for all regulatory standards applicable to your region.

FET, MOSFET Arrays Selection Notes

Select this component based on its dual-channel architecture which simplifies layout for half-bridge or full-bridge topologies. Evaluate the total power dissipation capabilities against your system's thermal management constraints. Consider the gate charge parameters if driving directly from standard logic-level controllers without additional gate drivers. Compare the on-resistance values with alternative packages to determine the optimal trade-off between size and efficiency for your specific power level.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family, known for combining low RDS(on) with robust avalanche ratings. It serves as a key building block in next-generation power management ICs and discrete solutions. The dual configuration allows designers to replace two separate MOSFETs, thereby improving reliability by reducing solder joint count and parasitic inductance in the source connections.

FET, MOSFET Arrays Replacement Considerations

Consult onsemi's official cross-reference tools for verified equivalent parts. Ensure any substitute maintains identical pinout compatibility and thermal performance metrics. Verify that alternative components meet the same voltage and current ratings required by the original circuit design.

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