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FDG8850NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 0.75A SC88. Review the specifications below when checking this part for your BOM.
The FDG8850NZ is a dual N-channel PowerTrench MOSFET manufactured by onsemi, designed for high-efficiency synchronous rectification and power conversion applications. This component integrates two independent MOSFETs within a single package to minimize thermal resistance and reduce board space requirements. The device utilizes advanced trench gate technology to achieve low on-resistance and fast switching speeds, which are critical for reducing conduction and switching losses in modern power supplies. It is housed in a compact surface-mount package suitable for automated assembly processes.
Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your manufacturing requirements. Confirm RoHS compliance status and material composition declarations through official onsemi documentation prior to integration. Check for any product change notifications that may affect pinout or electrical characteristics. Ensure the supplier provides valid certificates of conformity for all regulatory standards applicable to your region.
Select this component based on its dual-channel architecture which simplifies layout for half-bridge or full-bridge topologies. Evaluate the total power dissipation capabilities against your system's thermal management constraints. Consider the gate charge parameters if driving directly from standard logic-level controllers without additional gate drivers. Compare the on-resistance values with alternative packages to determine the optimal trade-off between size and efficiency for your specific power level.
This part belongs to onsemi's PowerTrench family, known for combining low RDS(on) with robust avalanche ratings. It serves as a key building block in next-generation power management ICs and discrete solutions. The dual configuration allows designers to replace two separate MOSFETs, thereby improving reliability by reducing solder joint count and parasitic inductance in the source connections.
Consult onsemi's official cross-reference tools for verified equivalent parts. Ensure any substitute maintains identical pinout compatibility and thermal performance metrics. Verify that alternative components meet the same voltage and current ratings required by the original circuit design.
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