FDJ1027P

FET, MOSFET Arrays Overview

The FDJ1027P is a dual P-Channel PowerTrench MOSFET designed for low-voltage applications. It features a Drain-Source Voltage (V_DSS) of -20 V and a continuous Drain Current (I_D) of -2.8 A at 25°C. The device specifies R_DS(ON) values of 160 mΩ at V_GS = -4.5 V, 230 mΩ at V_GS = -2.5 V, and 390 mΩ at V_GS = -1.8 V. Gate Threshold Voltage (V_GS(th)) ranges from -0.4 V to -1.5 V. Total Gate Charge (Q_g) is typically 34 nC. The component operates within a junction temperature range of -55°C to +150°C and utilizes an FLMP SC75 package.

FET, MOSFET Arrays Feature Summary

• Optimized for battery power management with specified operation at 1.8 V gate drive levels
• Advanced trench technology provides extremely low on-resistance across various gate voltages
• FLMP SC75 package design enhances thermal performance within standard footprint dimensions

FET, MOSFET Arrays Applications

• Battery management systems
• Charger applications
• Load switch circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status when sourcing this component, as datasheets indicate it may be classified as obsolete or no longer in production by Fairchild Semiconductor. Confirm availability through authorized distributors or secondary market suppliers. Ensure that the received units match the FLMP SC75 package outline and marking requirements specified in the official documentation before integration into designs.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-Channel switching with low gate drive voltage compatibility. The 1.8 V specified R_DS(ON) makes it suitable for modern microcontrollers with lower logic levels. Consider the thermal resistance characteristics and ensure adequate copper pad area on the PCB to maintain safe operating temperatures under load conditions.

FET, MOSFET Arrays Part Context

The FDJ1027P belongs to the PowerTrench family developed by Fairchild Semiconductor, which has since become part of onsemi. This series focuses on low-voltage enhancement mode MOSFETs utilizing advanced trench processes. The dual configuration allows for compact implementation of high-side switching or bridge circuits in space-constrained portable electronics.

FET, MOSFET Arrays Replacement Considerations

Check for updated part numbers if transitioning from Fairchild to onsemi manufacturing lines. Verify pinout compatibility with the FLMP SC75 package. Compare electrical parameters such as R_DS(ON) at 1.8 V and thermal resistance to ensure equivalent performance in the target application.