FDMA1024NZ

FET, MOSFET Arrays Overview

The FDMA1024NZ is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a MicroFET-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and supports a continuous drain current (Id) of 3.7 A. Its typical drain-source on-resistance (Rds On) is 37 mOhms. The gate-source voltage range is specified from -12 V to +12 V, with a threshold voltage (Vgs th) of 1.5 V. The total gate charge (Qg) is 4 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation (Pd) rating of 1.4 W. The component exhibits rise and fall times of 8 ns and a minimum forward transconductance of 16 S.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact MicroFET-6 package for space-constrained designs.
• Low on-resistance characteristic to minimize conduction losses in power switching applications.
• Enhanced mode operation with fast switching speeds suitable for high-frequency control.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring low-voltage synchronous rectification.
• Load switching and power management modules in portable electronics.
• Battery protection circuits utilizing dual-channel isolation or control.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the supplier's declaration documents prior to integration into regulated assemblies.

FET, MOSFET Arrays Selection Notes

Select this component when a 20 V rating and approximately 3.7 A continuous current are required in a small footprint. Ensure the application voltage remains below the 20 V breakdown limit and that thermal management accommodates the 1.4 W power dissipation capability at the expected operating temperature.

FET, MOSFET Arrays Part Context

This part belongs to the FDMA series of dual MOSFETs from onsemi. It is designed using PowerTrench technology, which focuses on optimizing the figure of merit for low-voltage power switching. The dual configuration allows for complementary bridge arrangements or independent channel control within a single package.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the 20 V Vds rating, similar Rds On characteristics, and compatible MicroFET-6 pinout to guarantee mechanical and electrical interchangeability.