FET, MOSFET Arrays FDMA3028N product image

FDMA3028N

  • Description:MOSFET 2N-CH 30V 3.8A 6MICROFET
  • Series:PowerTrench®

SKU:ab2e23b1fbdc Category: Brand:

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FDMA3028N is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 3.8A 6MICROFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMA3028N

  • Description:MOSFET 2N-CH 30V 3.8A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.8A
  • Rds On (Max) @ Id, Vgs:68mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:375pF @ 15V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-MicroFET (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMA3028N

FDMA3028N

FET, MOSFET Arrays Overview

The FDMA3028N is a dual N-channel enhancement-mode MOSFET from onsemi's PowerTrench series. It features a MicroFET-6 surface-mount package with three pins per channel configuration within the six-pin footprint. Key electrical parameters include a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 3.8 A. The device exhibits a maximum on-resistance (Rds(on)) of 123 mΩ at standard test conditions. Gate-source voltage limits are specified at ±12 V, with a typical gate charge (Qg) of 5.2 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.5 W.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for space-efficient circuit designs
  • Enhancement mode operation optimized for low-voltage switching applications
  • MicroFET-6 surface mount package suitable for automated assembly

FET, MOSFET Arrays Applications

  • Low-voltage DC-DC converter circuits
  • Load switching in portable electronic devices
  • Battery protection and management systems

FET, MOSFET Arrays Procurement Notes

Verify availability status carefully as this component is listed as discontinued or having restricted supply through major distributors like Mouser. Confirm end-of-life status directly with onsemi before finalizing design-in decisions. Check for alternative sourcing channels if immediate procurement is required, noting that standard lead times may not apply due to limited stock conditions.

FET, MOSFET Arrays Selection Notes

Select this part only if the 30 V drain-source voltage and 3.8 A current ratings sufficiently cover the application requirements. Consider the 123 mΩ on-resistance impact on thermal performance given the 1.5 W power dissipation limit in the MicroFET-6 package. Evaluate whether the dual-channel architecture provides necessary functionality compared to single-channel alternatives, keeping in mind its discontinued status may affect long-term production viability.

FET, MOSFET Arrays Part Context

The FDMA3028N belongs to onsemi's PowerTrench family, which focuses on low-gate-charge MOSFETs for efficient power conversion. This specific model represents an older generation dual-channel solution designed for compact form factors. It serves as a legacy component for existing designs requiring integrated dual N-channel switching in low-voltage environments, preceding newer high-density packaging technologies.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, engineers must identify equivalent dual N-channel MOSFETs with matching 30 V/3.8 A ratings and compatible MicroFET-6 pinouts through independent cross-reference tools.

FDMA3028NFDMA3028N

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