FDMC007N30D

$1.22

Description：MOSFET 2N-CH 30V 46A 8PWR33
Series：-

SKU:62e0c3c5eae3 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDMC007N30D is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 46A 8PWR33. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMC007N30D

Description：MOSFET 2N-CH 30V 46A 8PWR33
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：46A
Rds On (Max) @ Id, Vgs：11.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1110pF @ 15V, 2360pF @ 15V
Power - Max：1.9W, 2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：8-Power33 (3x3)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDMC007N30D

FDMC007N30D

FET, MOSFET Arrays Overview

The FDMC007N30D is a single N-channel PowerTrench MOSFET manufactured by onsemi. It features a 30 V drain-source voltage rating and a typical on-resistance of 0.7 mΩ at a gate-source voltage of 10 V. The device supports a continuous drain current of up to 250 A at 25 °C case temperature, with a pulsed drain current capability of 600 A. Packaged in the compact DPAK-4 (TO-252) surface-mount format, it utilizes advanced trench gate technology to minimize conduction losses while maintaining robust switching performance for high-current power management applications.

FET, MOSFET Arrays Feature Summary

Advanced Trench Gate Technology
Ultra-Low On-Resistance
High Current Capability

FET, MOSFET Arrays Applications

Point-of-Load (POL) DC/DC Converters
Power Distribution Networks
Battery Protection Circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure component authenticity through authorized supply channels and check for RoHS compliance markings consistent with current production standards.

FET, MOSFET Arrays Selection Notes

Evaluate thermal resistance parameters relative to the intended PCB copper area and airflow conditions. Confirm that the maximum junction temperature limits are not exceeded during peak load operations and verify compatibility with standard gate drive voltages for optimal switching efficiency.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench family of N-channel enhancement mode field-effect transistors. These devices are engineered for low-voltage, high-current synchronous rectification and load switch applications requiring minimal footprint and high efficiency.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other 30V N-channel MOSFETs in the TO-252 package offering comparable Rds(on) and current ratings. Verify pinout compatibility and ensure thermal characteristics meet or exceed original design requirements.