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The FDMC6676BZ is a single P-Channel PowerTrench MOSFET manufactured by onsemi. It features a -30V drain-source breakdown voltage and supports a continuous drain current of -20A. The device utilizes advanced trench technology to achieve low on-resistance, specifically 14mΩ at VGS = -10V. Packaged in the compact DFN5 surface-mount footprint, it is designed for efficient power switching applications requiring high reliability and thermal performance.
Verify component authenticity through authorized distribution channels. Confirm that the part number matches the specific suffix requirements for your design. Check for obsolescence status as this component may be subject to lifecycle changes. Ensure storage conditions comply with moisture sensitivity level specifications prior to assembly.
Select this component when a -30V P-Channel MOSFET with -20A current capability is required. The low RDS(on) makes it suitable for efficiency-critical designs. Consider the DFN5 package size constraints and thermal dissipation needs relative to the application's power budget and ambient temperature conditions.
This component belongs to the PowerTrench family of MOSFETs from onsemi (formerly Fairchild Semiconductor). The series is characterized by optimized trench gate technology for low conduction losses. The FDMC prefix indicates a specific subset within the broader discrete semiconductor portfolio focused on medium-voltage power switching solutions.
Consult official substitution guides for verified equivalents. Generic replacements must match the -30V rating, -20A current capacity, and DFN5 package dimensions. Verify pinout compatibility and thermal characteristics before implementation.