FDMC7200S

FET, MOSFET Arrays Overview

The FDMC7200S is an N-channel MOSFET manufactured by onsemi, utilizing PowerTrench technology. It features a maximum drain-source voltage of 30 V and a continuous drain current of 150 A at 25 °C case temperature. The device achieves a low on-resistance of 1.4 mΩ at a gate-source voltage of 10 V. Packaged in a compact DPAK (TO-252) surface-mount format, it supports high-efficiency power switching applications.

FET, MOSFET Arrays Feature Summary

• PowerTrench technology optimizes the figure of merit for low conduction and switching losses
• Enhanced thermal performance through optimized package design and silicon integration
• Lead-free construction with RoHS compliance for environmental safety

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Load switch designs
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm the exact packaging configuration, such as tape-and-reel quantities or standard tube packaging. Confirm that the component meets the required automotive or industrial qualification standards if applicable to the target system environment.

FET, MOSFET Arrays Selection Notes

Select this component when a 30 V rating and high current capacity are required in a small footprint. Ensure the thermal design accounts for the power dissipation limits defined in the datasheet under the expected ambient operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of N-channel MOSFETs. These devices are engineered to provide superior performance compared to standard planar technologies, offering lower on-resistance and faster switching speeds within similar package constraints.

FET, MOSFET Arrays Replacement Considerations

Check for direct replacements with identical pinouts and electrical parameters from other manufacturers. Verify that any substitute maintains the same voltage, current, and resistance ratings to ensure circuit compatibility.