FDMC8097AC

FET, MOSFET Arrays Overview

The FDMC8097AC is a dual-channel PowerTrench MOSFET from onsemi, integrating one N-channel and one P-channel enhancement-mode transistor in a single Power-33-8 package. The N-channel device supports a drain-source voltage (Vds) of 150 V with a continuous drain current (Id) of 2 A and an on-resistance (Rds(on)) of 155 mΩ. The P-channel counterpart offers a Vds of 150 V, an Id of 6.3 A, and an Rds(on) of 1.03 Ω. Both channels operate within a junction temperature range of -55°C to +150°C, with power dissipation ratings of 10 W for the N-channel and 14 W for the P-channel.

FET, MOSFET Arrays Feature Summary

• Dual configuration combining N-channel and P-channel enhancement-mode transistors in a compact surface-mount package.

FET, MOSFET Arrays Applications

• High-side and low-side load switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS directives if required by the target assembly standards. Cross-reference the Power-33-8 footprint dimensions with PCB layout guidelines to prevent mechanical interference during installation.

FET, MOSFET Arrays Selection Notes

Select this component when a mixed N/P-channel solution is required for bridge or half-bridge topologies without increasing board space. The 150 V rating suits medium-voltage DC-DC converters and motor control interfaces. Evaluate thermal management requirements based on the 10 W and 14 W dissipation limits under expected duty cycles and ambient conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family, designed for efficient power switching applications. It integrates two distinct channel types into one housing, simplifying bill-of-materials and assembly processes compared to using separate discrete components for complementary switching roles.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for equivalent dual-channel MOSFETs with matching Vds and package constraints. Verify that any alternative maintains compatible gate threshold voltages and thermal characteristics for direct replacement.