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FDMC8298 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH DIE. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMC8298
- Description：MOSFET 2N-CH DIE
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMC8298
FET, MOSFET Arrays Overview
The FDMC8298 is an N-Channel PowerTrench MOSFET manufactured by onsemi, designed for surface-mount applications. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 15 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 14 mΩ at Vgs = 10 V and 25 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate charge (Qg) of 16 nC at 10 V, input capacitance (Ciss) of 1700 pF at 25 V, and a threshold voltage (Vgs(th)) of 2 V at 250 µA. The component operates within a junction temperature range of -55°C to 150°C and is housed in a compact 8-MLP (3x3 mm) package.
FET, MOSFET Arrays Feature Summary
- PowerTrench technology optimized for low on-resistance and fast switching performance
- Enhanced gate charge characteristics for efficient drive requirements
- Robust thermal design supporting high power dissipation in small footprints
FET, MOSFET Arrays Applications
- DC-DC converter output stages
- Synchronous rectification in point-of-load modules
- Low-side switching in motor control circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix to confirm packaging type, such as tape and reel or cut tape, as these affect handling but not electrical function. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure the source document matches the exact part number to avoid discrepancies in pinout or specifications.
FET, MOSFET Arrays Selection Notes
Select this component when a 30 V rating and 15 A continuous current capability are required in an 8-lead MLP package. Consider the 14 mΩ Rds(on) at 10 V drive for high-efficiency designs. Verify that the application circuit can provide sufficient gate voltage to achieve the minimum resistance specification. Evaluate thermal management needs based on the 2.3 W (Ta) power dissipation rating.
FET, MOSFET Arrays Part Context
The FDMC8298 belongs to onsemi's PowerTrench family of N-channel MOSFETs. This series is engineered for general-purpose power switching applications requiring low conduction losses. The device utilizes advanced trench gate technology to minimize resistance while maintaining reliable operation under varying thermal conditions common in modern electronic systems.
FET, MOSFET Arrays Replacement Considerations
Direct substitutes must match the 30 V, 15 A, 8-MLP form factor. Check equivalent parts from other manufacturers for compatible Rds(on) and Qg values. Ensure pinout compatibility if replacing in existing layouts. Verify that alternative components meet the same operating temperature and moisture sensitivity levels.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
