FDMD82100L

FET, MOSFET Arrays Overview

The FDMD82100L is a dual N-channel PowerTrench MOSFET array manufactured by onsemi. It features a 100V drain-source voltage rating and supports a continuous drain current of 7A at 25°C. The device utilizes a logic-level gate architecture with a maximum threshold voltage of 3V at 250µA. Its on-resistance is specified at 19.5mΩ when driven at 10V with a 7A load. Key electrical characteristics include a maximum gate charge of 24nC at 10V and an input capacitance of 1585pF at 50V. The component is housed in a 12-PowerWDFN package (12-Power3.3x5) and operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs within a single surface-mount package for space-efficient circuit design.
• Logic-Level Gate Drive: Optimized for direct interface with standard logic outputs, featuring a low threshold voltage specification.
• PowerTrench Technology: Utilizes onsemi's planar trench technology to achieve low on-resistance and efficient power switching performance.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring compact dual-switch topologies
• Low-voltage motor control applications
• Power management systems utilizing logic-level drive signals

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'L' against official datasheets, as it may denote packaging or material variations. Confirm availability status, as related models in this series have been discontinued. Ensure compliance with RoHS directives and check for alternative sources if original supply is limited.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a dual N-channel configuration in a small footprint. Verify that the 10V gate drive requirement aligns with the system's logic levels. Consider the 19.5mΩ on-resistance for thermal management calculations under 7A load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the FDMD82 family of dual MOSFET arrays from onsemi. It shares the same basic product number structure as other variants like the FDMD82100, differing primarily in specific electrical parameters or packaging details defined by the manufacturer's naming convention.

FET, MOSFET Arrays Replacement Considerations

Public documentation identifies the FDS89161 as a substitute for the non-L variant. Verify pin compatibility and electrical specifications before replacing the FDMD82100L with alternative parts.