FDMD84100

FET, MOSFET Arrays Overview

The FDMD84100 is a PowerTrench N-channel MOSFET from onsemi, designed for high-efficiency power switching applications. It features an 80 V drain-source voltage rating and a low on-resistance of 0.65 mΩ at room temperature. The device utilizes advanced trench technology to achieve superior RDS(on) performance while maintaining robust avalanche energy capabilities. Packaged in a compact D2PAK-7 (TO-263AB) surface-mount case, it offers optimized thermal dissipation for demanding environments. Key electrical characteristics include a continuous drain current of 190 A and a pulsed drain current capability of 760 A, ensuring reliable operation under heavy load conditions.

FET, MOSFET Arrays Feature Summary

• Advanced trench technology delivers low on-resistance for enhanced efficiency
• Highly ruggedized design supports fast switching and avalanche energy handling
• Optimized thermal performance within a standard surface-mount package

FET, MOSFET Arrays Applications

• DC-DC converter modules
• Power factor correction circuits
• Motor control systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm pin configuration and packaging details. Ensure compliance with RoHS directives by checking the material composition declaration. Confirm the active status directly through authorized distribution channels before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when low conduction losses are critical for system efficiency. The 80 V rating suits applications requiring moderate voltage isolation. Evaluate thermal management requirements based on the specified RθJA values. Consider the D2PAK-7 footprint compatibility during PCB layout design to ensure adequate heat sinking.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family, known for balancing cost and performance in power management solutions. It serves as a discrete alternative to integrated power stages in medium-power designs. The device complements other low-voltage MOSFETs in the portfolio for building complete power supply architectures.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 80 V rating, 0.65 mΩ RDS(on), and D2PAK-7 package. Verify pinout compatibility and thermal resistance specifications. Cross-reference with similar PowerTrench devices offering comparable current ratings if exact matches are unavailable.