FET, MOSFET Arrays FDMD8440L product image

FDMD8440L

$1.95
  • Description:MOSFET 2N-CH 40V 21A PWR 3.3X5
  • Series:PowerTrench®

SKU:02da7e33458d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

FDMD8440L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 40V 21A PWR 3.3X5. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMD8440L

  • Description:MOSFET 2N-CH 40V 21A PWR 3.3X5
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:21A (Ta), 87A (Tc)
  • Rds On (Max) @ Id, Vgs:2.6mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:4150pF @ 20V
  • Power - Max:2.1W (Ta), 33W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:Power 3.3x5
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMD8440L

FDMD8440L

FET, MOSFET Arrays Overview

The FDMD8440L is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 21A at ambient temperature, rising to 87A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2.6 milliohms at 10V gate drive and 21A current. Key electrical parameters include a maximum gate charge of 62nC at 10V and an input capacitance of 4150pF at 20V. The threshold voltage is specified at 3V with a 250µA drain current. Thermal performance allows for a maximum power dissipation of 2.1W at ambient and 33W at case temperatures. The component operates within a junction temperature range of -55°C to 150°C and is housed in an 8-PowerWDFN package.

FET, MOSFET Arrays Feature Summary

  • Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs in a single surface-mount package for space-efficient circuit design.
  • Low On-Resistance Technology: Utilizes PowerTrench architecture to achieve minimal conduction losses and improved thermal efficiency.
  • High Current Capability: Supports significant continuous and pulsed drain currents suitable for high-power switching applications.

FET, MOSFET Arrays Applications

  • DC-DC converter output stages
  • Synchronous rectification circuits
  • Motor control bridge drivers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to ensure correct packaging and compliance status. Confirm RoHS3 material declaration requirements if applicable to the target market. Check for End-of-Life notices or Product Change Notifications regarding availability and lead times. Ensure the selected variant matches the required moisture sensitivity level and storage conditions for the assembly process.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage, high-current applications. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat dissipation. Compare the gate charge and input capacitance values against the driving capability of the intended controller IC to ensure adequate switching speed and minimize driver losses.

FET, MOSFET Arrays Part Context

The FDMD8440L belongs to the PowerTrench family from onsemi, designed for efficient power management. It serves as a dual-channel alternative to single MOSFETs, reducing board space and parasitic inductance. This series targets applications requiring robust performance in constrained form factors, such as portable electronics and industrial power supplies.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the available documentation. Designers should consult the manufacturer's official replacement guide or contact technical support for qualified alternatives due to the component's discontinued status.

FDMD8440LFDMD8440L
$1.95
Buy Now