FDMD8680

FET, MOSFET Arrays Overview

The FDMD8680 is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features an 80V drain-source breakdown voltage and a continuous drain current of 16A. The device exhibits a maximum on-resistance of 4.7 milliohms at room temperature. It operates with a gate-source voltage range of -20V to +20V and has a threshold voltage of 2V. The total gate charge is 73nC. The component supports surface mount installation in a Power-5x6-8 package. It functions as an enhancement mode transistor with a power dissipation rating of 2.3W. The operating junction temperature range spans from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual channel configuration for integrated circuit design
• PowerTrench technology for low conduction losses
• Enhancement mode operation with standard gate drive compatibility

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-DC converters
• Low voltage motor control circuits
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the obsolescence status before procurement, as the component is listed as end-of-life. Confirm availability through authorized distributors or secondary markets. Ensure RoHS compliance documentation is obtained. Check for specific packaging requirements such as reel or cut tape options. Validate that the supplier provides genuine onsemi products to avoid counterfeit risks.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. The 80V rating suits low-voltage systems. Evaluate thermal management needs due to the 2.3W power dissipation limit. Consider the 4.7mOhm on-resistance for efficiency calculations. Verify PCB land pattern compatibility with the Power-5x6-8 package dimensions.

FET, MOSFET Arrays Part Context

The FDMD8680 belongs to onsemi's PowerTrench MOSFET family. This series utilizes shielded gate trench technology to minimize on-resistance. The dual configuration allows for half-bridge or synchronous rectifier implementations. It targets cost-sensitive power management solutions requiring moderate voltage ratings.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify on-resistance and gate charge specifications match system requirements. Consult onsemi documentation for recommended cross-reference parts.