FET, MOSFET Arrays FDMS3602S-P product image

FDMS3602S-P

$0.99
  • Description:MOSFET 2N-CH 25V 15A 8PQFN
  • Series:-

SKU:199e67fcadfa Category: Brand:

  
  • Quantity
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FDMS3602S-P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 15A 8PQFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS3602S-P

  • Description:MOSFET 2N-CH 25V 15A 8PQFN
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs:5.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA, 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V, 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1680pF @ 13V, 4120pF @ 13V
  • Power - Max:2.2W (Ta), 2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-PQFN (5x6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMS3602S-P

FDMS3602S-P

FET, MOSFET Arrays Overview

The FDMS3602S-P is a 25 V asymmetric dual N-channel MOSFET from the PowerTrench Power Stage series. It integrates two independent channels in a single package to optimize board space and thermal performance. Key electrical parameters include a drain-source voltage (Vds) of 25 V, continuous drain current (Id) up to 30 A, and low on-resistance (Rds(on)) values typically around 1.6 mΩ for the high-side device. The component operates within a junction temperature range of -55 °C to +150 °C and features enhanced switching characteristics suitable for synchronous rectification applications.

FET, MOSFET Arrays Feature Summary

  • Asymmetric dual configuration allows optimized selection of high-side and low-side devices within a single package
  • PowerTrench technology provides low on-resistance for improved efficiency
  • Integrated power stage design reduces component count and PCB footprint
  • Enhanced thermal performance through advanced packaging solutions

FET, MOSFET Arrays Applications

  • Synchronous buck converters in point-of-load (POL) modules
  • DC-DC step-down regulators for computing and datacom equipment
  • Low voltage power management systems requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'P' against official datasheets to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and material composition declarations directly with the manufacturer or authorized distributors before procurement. Ensure ordering documentation matches the exact part number to avoid substitution errors.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a 25 V rating with high current capacity in a small outline. Compare Rds(on) and gate charge values against alternative packages to balance conduction losses and switching speed. Verify thermal resistance parameters match the intended PCB copper area and airflow conditions for reliable operation under maximum load.

FET, MOSFET Arrays Part Context

This device belongs to the FDMS series of asymmetric dual N-channel MOSFETs manufactured by onsemi. It is part of the PowerTrench Power Stage family, which focuses on integrating complementary or optimized asymmetric FETs to simplify power supply design. The series is widely used in consumer electronics and industrial power supplies where space constraints are critical.

FET, MOSFET Arrays Replacement Considerations

Direct replacements may include other 25 V asymmetric dual N-channel MOSFETs from onsemi such as the FDMS3600S or FDMS3624S, provided pin compatibility and electrical ratings meet the design requirements. Always verify package dimensions and thermal characteristics when substituting.

FDMS3602S-PFDMS3602S-P
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