FDMS3604AS

FET, MOSFET Arrays Overview

The FDMS3604AS is a PowerTrench Power Stage featuring two specialized N-Channel MOSFETs in a dual PQFN package. The switch node is internally connected to facilitate synchronous buck converter placement. Q1 (control) has max rDS(on) of 8 mΩ at VGS=10V/ID=13A and 11 mΩ at VGS=4.5V/ID=11A. Q2 (SyncFET) has max rDS(on) of 2.6 mΩ at VGS=10V/ID=23A and 3.5 mΩ at VGS=4.5V/ID=21A. Ratings include VDS of 30V, continuous ID up to 13A (Q1) and 23A (Q1), and junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Internal connection of the switch node enables optimized layout for lower circuit inductance and reduced switch node ringing.
• Low inductance packaging design shortens rise and fall times to minimize switching losses.
• Integrated SyncFET process embeds a Schottky diode parallel to the MOSFET for improved efficiency.

FET, MOSFET Arrays Applications

• Computing
• Communications
• General Purpose Point of Load
• Notebook VCORE
• Server

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to industry counterfeiting risks. Confirm RoHS compliance status and check current production lifecycle status, as datasheets may reference obsolete Fairchild Semiconductor branding prior to ON Semiconductor acquisition. Ensure storage conditions meet specified limits.

FET, MOSFET Arrays Selection Notes

Select this asymmetric dual MOSFET for synchronous buck converters requiring optimized phase node performance. Verify gate drive voltage compatibility with specified rDS(on) thresholds at 10V and 4.5V. Ensure PCB layout adheres to recommended guidelines for thermal dissipation and parasitic inductance minimization to maintain stability within breakdown limits.

FET, MOSFET Arrays Part Context

Originally manufactured by Fairchild Semiconductor under the PowerTrench brand, this device was acquired by ON Semiconductor. It belongs to the Power Stage family designed specifically for high-efficiency DC-DC conversion. The internal integration of control and synchronous FETs distinguishes it from discrete dual MOSFET solutions by reducing external component count and layout complexity.

FET, MOSFET Arrays Replacement Considerations

FDMS3604S

FET, MOSFET Arrays FAQ

How does the internal switch node connection benefit the circuit?

It allows for easy placement and routing of synchronous buck converters while minimizing circuit inductance and reducing switch node ringing without external snubbing components.

What are the maximum drain-source on-resistance values for Q1 and Q2?

Q1 has a max rDS(on) of 8 mΩ at VGS=10V and 11 mΩ at VGS=4.5V. Q2 has a max rDS(on) of 2.6 mΩ at VGS=10V and 3.5 mΩ at VGS=4.5V.

Does the device include an integrated body diode?

Yes, the SyncFET process embeds a Schottky barrier diode in parallel with the PowerTrench MOSFET, exhibiting characteristics similar to a discrete external Schottky diode.