FDMS3660S

FET, MOSFET Arrays Overview

The FDMS3660S is a dual N-channel PowerTrench MOSFET from onsemi, housed in a Power-56-8 surface-mount package. It features a 30 V drain-source breakdown voltage and operates within an ambient temperature range of -55 °C to +150 °C. The device provides two independent channels with continuous drain currents of 13 A and 30 A respectively. On-resistance values are specified at 8 mΩ and 1.8 mΩ for the respective channels. Gate-source voltage limits extend to ±20 V, with a typical threshold voltage of 1.1 V. Total gate charge ranges between 29 nC and 87 nC depending on the channel configuration. Thermal dissipation capabilities are rated at 2.2 W and 2.5 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel enhancement mode configuration integrated into a single compact PowerStage package
• PowerTrench technology optimized for low on-resistance and efficient switching performance
• High thermal stability supporting operation up to +150 °C junction temperature

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring dual synchronous rectification
• Low-voltage power management systems
• Automotive electronic control units

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number FDMS3660S with official onsemi documentation. Confirm compliance with RoHS and REACH standards through available Material Composition Declarations. Ensure the Power-56-8 package matches design requirements before integration. Validate electrical parameters against current datasheets to confirm suitability for specific circuit applications.

FET, MOSFET Arrays Selection Notes

Select this component when designing low-voltage power stages requiring dual N-channel isolation in a small footprint. The 30 V rating suits applications below standard 48 V bus voltages. Compare on-resistance and gate charge specifications against alternative devices to optimize efficiency. Verify that the 13 A and 30 A current ratings align with peak load requirements while maintaining thermal margins within the specified operating temperature range.

FET, MOSFET Arrays Part Context

This device belongs to the FDMS series of PowerStage MOSFETs from onsemi. These components integrate multiple transistors into unified packages to reduce board space and parasitic inductance. The PowerTrench family utilizes advanced silicon planar technology to achieve high performance in automotive and industrial power applications.

FET, MOSFET Arrays Replacement Considerations

The FDMS3624S serves as a related variant within the same series but differs in voltage rating (25 V) and resistance characteristics. Verify pin compatibility and electrical limits before substitution. Consult official cross-reference tools for additional alternatives matching specific current or voltage constraints.