FDMS3686S

FET, MOSFET Arrays Overview

The FDMS3686S is a dual N-Channel MOSFET from onsemi's PowerTrench series, housed in an 8-pin PQFN package. It features an internal connection between switch nodes for simplified placement. Key electrical parameters include a Drain-Source Breakdown Voltage (Vds) of 30 V and a Gate-Source Voltage (Vgs) range of -12 V to 12 V. The device supports a continuous drain current (Id) of 23 A with a maximum on-resistance (Rds(on)) of 8 mOhms. Operating temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual asymmetric N-Channel configuration with internally connected switch nodes
• PowerTrench technology for optimized power stage performance
• Silicon-based construction suitable for high-reliability applications

FET, MOSFET Arrays Applications

• Power management circuits requiring dual MOSFET integration
• DC-DC converter topologies utilizing asymmetric switching
• Industrial control systems needing robust power stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and package variant against the official onsemi datasheet before procurement. Confirm that the component status aligns with project requirements, as availability may vary by region. Ensure that the internal switch node connection matches the target circuit design constraints. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit sources.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-Channel solution with low on-resistance is required. The 30 V breakdown voltage suits low-voltage power applications. Consider the 8-pin PQFN footprint for space-constrained designs. Verify thermal dissipation capabilities against the expected load current and ambient temperature conditions.

FET, MOSFET Arrays Part Context

The FDMS3686S belongs to onsemi's PowerTrench family, designed for efficient power switching. It complements other devices like the FDMS3669S within the same product line. The internal switch node connection distinguishes it from standard dual MOSFETs, offering layout advantages in specific power stage configurations.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes within the PowerTrench series. Compare pinout compatibility and electrical ratings such as Vds and Rds(on). Verify package dimensions to ensure mechanical fit. Consult onsemi documentation for updated device numbers or recommended alternatives.