FDN336P

Single FETs, MOSFETs Overview

The FDN336P is a single P-Channel MOSFET manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It utilizes leading trench technology to achieve low on-state resistance and low gate charge for superior switching performance. The device features a Drain-Source Breakdown Voltage of -20 V and a Continuous Drain Current of -1.3 A at Tc=25°C. Maximum power dissipation is 0.5 W, with a maximum junction temperature of 150 °C. On-state resistance is specified as 200 mΩ at VGS = -4.5 V and 270 mΩ at VGS = -2.5 V.

Single FETs, MOSFETs Feature Summary

• Leading trench technology provides extremely low RDS(on) for efficient power handling.
• Low gate charge characteristics enable superior switching performance.
• Designed specifically for portable electronics applications.

Single FETs, MOSFETs Applications

• Video monitor circuits
• Power management systems
• Load switching

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation matches Shenzhen Slkormicro Semicon Co., Ltd. when sourcing this component. Confirm the package type is SOT-23 and check for RoHS compliance status in the specific supplier documentation. Ensure the ordering suffix aligns with the required tape and reel or cut tape packaging format. Cross-reference electrical parameters against the official datasheet to guarantee compatibility with the target circuit design requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-Channel solution with low on-resistance. The -20 V rating suits low-voltage DC/DC conversion and battery charging circuits. Consider the thermal resistance of 250 °C/W for heat dissipation planning. The SOT-23 package offers space efficiency for portable devices. Evaluate gate charge specifications against switching frequency requirements to optimize drive circuit complexity.

Single FETs, MOSFETs Part Context

This component belongs to the category of PowerTrench MOSFETs designed for portable electronics. It serves as a power switch in load switching and power management applications. The device integrates high-performance trench technology to minimize conduction losses while maintaining fast switching speeds suitable for modern electronic equipment.

Single FETs, MOSFETs Replacement Considerations

FDN338P

Single FETs, MOSFETs FAQ

What is the typical total gate charge (Qg) for the FDN336P?

The typical total gate charge is 4.4 nC.

What is the forward on voltage of the source-drain diode?

The forward on voltage is typically -1.2 V at Tj=25°C with Is=-1.3A.