FDPC8011S

FET, MOSFET Arrays Overview

The FDPC8011S is a dual N-channel PowerTrench MOSFET from onsemi, housed in an 8-pin Power-33-8 (WDFN) surface-mount package. It features asymmetric channel configurations with distinct electrical characteristics for Q1 and Q2. Key parameters include a drain-source voltage (Vds) of 25 V and gate-source voltage (Vgs) limits of ±12 V. The device supports continuous drain currents up to 13 A for Q1 and 60 A for Q2 at case temperature. On-resistance (Rds(on)) is specified at 7.3 mΩ maximum. Gate charge (Qg) ranges from 19 nC to 64 nC depending on the channel. Operating junction temperatures span from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Asymmetric dual N-channel architecture providing differentiated current handling capabilities within a single compact package.

FET, MOSFET Arrays Applications

• TV monitors
• Power over Ethernet (PoE) systems
• Network equipment
• Telecommunications infrastructure

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number FDPC8011S with official onsemi documentation. Confirm compliance status via RoHS and REACH SVHC declarations provided in the datasheet. Ensure the selected package variant matches the required PCB footprint specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring low-voltage switching with asymmetric load requirements. The dual configuration allows independent control of channels with different current ratings. Evaluate thermal management strategies based on the specific power dissipation limits of each channel under expected operating conditions.

FET, MOSFET Arrays Part Context

This device belongs to the onsemi PowerTrench series, which focuses on high-performance power switching solutions. The FDPC8011S utilizes silicon technology optimized for efficiency in consumer and industrial electronics. Its small form factor supports dense PCB layouts common in modern portable and fixed electronic devices.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent dual N-channel MOSFETs with compatible voltage and current ratings. Verify pinout compatibility and thermal performance metrics before implementing any alternative components in existing designs.

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in the FDPC8011S?

The FDPC8011S features an asymmetric design where Q2 offers significantly higher continuous drain current and lower on-resistance compared to Q1, allowing for differentiated load handling within the same package.

What is the maximum operating junction temperature?

The maximum operating junction temperature for the FDPC8011S is +150°C.