FDS4897AC

FET, MOSFET Arrays Overview

The onsemi FDS4897AC is a dual PowerTrench MOSFET featuring one N-channel and one P-channel transistor in a single surface-mount package. The N-channel device supports a drain-source voltage (Vds) of 40V with a continuous drain current (Id) of 6.2A, exhibiting an on-resistance (Rds(on)) of 29mΩ at Vgs=10V and 36mΩ at Vgs=4.5V. The complementary P-channel device provides a Vds of -40V and an Id of -4.4A, with Rds(on) values of 46mΩ at Vgs=-10V and 63mΩ at Vgs=-4.5V. This configuration enables efficient high-side and low-side switching within a compact footprint.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel and P-Channel integration for simplified circuit design
• PowerTrench technology for enhanced power handling capability
• Surface mount packaging for automated assembly compatibility

FET, MOSFET Arrays Applications

• Inverter circuits
• DC-DC power supplies

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as the part number prefix 'FDS' historically belongs to Fairchild Semiconductor, which was acquired by onsemi. Ensure the datasheet provided matches the specific electrical characteristics of the FDS4897AC variant. Confirm RoHS compliance status and check for any specific ordering suffixes that may indicate tape-and-reel versus tube packaging formats.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N-P channel pair is required for synchronous rectification or half-bridge applications. The 40V rating suits low-voltage DC systems. Verify that the gate drive voltage levels align with the specified Rds(on) test conditions (4.5V or 10V). Consider the thermal dissipation requirements based on the combined power loss of both channels under load.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of MOSFETs, known for low on-resistance and fast switching speeds. Originally developed by Fairchild Semiconductor, these parts are now supported under the onsemi portfolio following the corporate acquisition. The dual configuration reduces board space compared to using discrete N and P devices separately.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include the FDS4897C and FDS4897AC variants from the same lineage. Other compatible dual N/P MOSFETs in similar packages should be evaluated for matching Vds, Id, and Rds(on) specifications to ensure circuit performance parity.