FDS6892A

FET, MOSFET Arrays Overview

The FDS6892A is a dual N-channel MOSFET array manufactured by onsemi, housed in an 8-SOIC surface-mount package. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 7.5 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 18 mΩ at 4.5 V gate drive and 7.5 A current. Key switching parameters include a maximum gate charge (Qg) of 17 nC at 4.5 V and a maximum input capacitance (Ciss) of 1286 pF at 10 V. The component operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 900 mW.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration: Integrates two independent N-channel enhancement-mode MOSFETs within a single compact SOIC-8 package for space-efficient circuit design.
• Logic Level Gate Drive: Optimized threshold characteristics allow direct interfacing with standard logic-level control signals without requiring additional gate drivers.
• Low On-Resistance: Achieves low Rds(on) performance to minimize conduction losses and improve overall power efficiency in high-current applications.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Load switching and power management circuits
• Motor control driver interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and compliance attributes. Confirm availability status as distribution listings may indicate obsolete or end-of-life conditions. Request the latest Material Composition Declaration and RoHS certification documents prior to finalizing procurement orders to meet regulatory requirements.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required within a limited footprint. Ensure the application voltage remains below the 20 V Vds rating and that the thermal design accommodates the 900 mW power dissipation limit. Verify that the gate drive voltage meets the logic level requirements for optimal Rds(on) performance.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of MOSFETs from onsemi, designed for general-purpose switching applications. It shares the base product number FDS68 with similar variants such as the FDS6892AZ, which may differ in packaging or environmental compliance specifications. The series is characterized by optimized gate charge and low on-resistance for efficient power management.

FET, MOSFET Arrays Replacement Considerations

The FDS6892AZ is a documented variant within the same base product line. Verify if the specific suffix change alters packaging or compliance status before substitution. Cross-reference pinouts and electrical parameters with the official datasheet to ensure compatibility.