FDS6898AZ

FET, MOSFET Arrays Overview

The FDS6898AZ is a dual N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 9.4 A. The device exhibits a low on-resistance (Rds(on)) of 14 mΩ at Vgs = 4.5 V. Gate characteristics include a threshold voltage (Vgs(th)) of 500 mV and a total gate charge (Qg) of 23 nC. Electrical performance includes rise and fall times of 15 ns and 16 ns, respectively, with a forward transconductance minimum of 47 S. The component supports a power dissipation of 2 W and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact SOIC-8 package for space-constrained designs.
• Low on-resistance technology minimizes conduction losses and improves thermal efficiency.
• Logic-level gate drive capability allows direct interfacing with standard logic outputs.
• Enhanced switching performance characterized by low gate charge and fast transition times.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Load switching and power management circuits
• Battery protection and management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement source provides valid RoHS compliance documentation and material composition declarations. Cross-reference the part number with official distributor catalogs to validate authenticity and traceability before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required for low-voltage applications. The 20 V rating suits 3.3 V and 5 V systems. Evaluate the 14 mΩ Rds(on) against thermal constraints to ensure adequate heat dissipation without additional heatsinking. Confirm that the 9.4 A current rating exceeds peak load requirements for reliable operation.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family, which focuses on optimizing on-resistance per unit area. The FDS6898AZ serves as a dual-channel variant within the FDS68xx series, offering a compact alternative to discrete single-channel MOSFETs. It targets applications requiring efficient power switching in limited board space.

FET, MOSFET Arrays Replacement Considerations

The FDS6892AZ is a documented related part within the same series. Verify pinout alignment and parameter differences before substitution. No other public substitute part numbers are confirmed for direct replacement.