ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FDS6900AS is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDS6900AS
- Description：MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
- Series：PowerTrench®, SyncFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A, 8.2A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDS6900AS
FET, MOSFET Arrays Overview
The FDS6900AS is a dual N-channel MOSFET from onsemi's PowerTrench series, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage of 30V and a continuous drain current of 6.9A at ambient temperature. The device exhibits a maximum on-resistance of 30 milliohms at 10V gate drive with 6.9A current, or 22 milliohms at 8.2A. Gate charge reaches 17nC at 5V, while input capacitance is 1238pF at 15V. Operating junction temperature spans -55°C to +150°C, with a maximum power dissipation of 900mW.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Logic-level gate compatibility for direct microcontroller interfacing
- Enhanced thermal performance within the PowerTrench architecture
FET, MOSFET Arrays Applications
- Low-voltage load switching applications
- DC-DC converter synchronous rectification
- Automotive body electronics control modules
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and specific manufacturing date codes against project requirements. Ensure storage conditions maintain moisture sensitivity level integrity prior to soldering processes.
FET, MOSFET Arrays Selection Notes
Evaluate thermal management capabilities given the 900mW dissipation limit in the SOIC-8 footprint. Compare gate charge specifications against driver capabilities to optimize switching speeds. Assess on-resistance variations under actual operating currents and temperatures for efficiency calculations.
FET, MOSFET Arrays Part Context
This component belongs to onsemi's PowerTrench family, designed for general-purpose low-voltage switching. The dual configuration integrates two independent N-channel devices into a single package, reducing board area compared to discrete solutions while maintaining standardized interface parameters.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with other 30V dual N-channel MOSFETs in SOIC-8 packages. Verify pinout compatibility and electrical parameter overlaps before substitution. Check manufacturer lifecycle status to ensure long-term availability for production runs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
