FET, MOSFET Arrays FDS6930A product image

FDS6930A

$0.65
  • Description:MOSFET 2N-CH 30V 5.5A 8SOIC
  • Series:PowerTrench®

SKU:ceae58ff98dd Category: Brand:

  
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FDS6930A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 5.5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6930A

  • Description:MOSFET 2N-CH 30V 5.5A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.5A
  • Rds On (Max) @ Id, Vgs:40mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:460pF @ 15V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS6930A

FDS6930A

FET, MOSFET Arrays Overview

The FDS6930A is a dual N-channel Logic Level PowerTrench MOSFET from onsemi, housed in an 8-SOIC surface-mount package. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 5.5 A. The device has a maximum on-resistance (Rds(on)) of 32 mΩ and a power dissipation (Pd) of 2 W. Typical gate charge (Qg) is 460 pF at 15 V, with a threshold voltage of 1.5 V and a rise time of 8 ns.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a single compact package
  • Logic level operation for direct microcontroller interfacing
  • Low on-resistance for efficient power switching

FET, MOSFET Arrays Applications

  • Battery protection circuits
  • Power management modules
  • Load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer datasheet revision to confirm electrical characteristics and pinout compatibility before integration. Ensure that thermal management requirements align with the 2 W power dissipation rating under actual operating conditions. Cross-reference the 8-SOIC footprint dimensions against the target PCB layout to guarantee accurate assembly and soldering integrity.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in a small form factor. The 30 V rating suits low-voltage systems, while the 5.5 A current capacity supports moderate load switching. The logic-level threshold facilitates control by standard digital I/O pins without additional gate drive circuitry.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family, designed for high-efficiency switching applications. The dual configuration allows for synchronized control or independent channel usage within space-constrained designs. It serves as a discrete alternative to integrated power switches in portable electronics and industrial control boards.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in 8-SOIC packages with comparable 30 V ratings and similar Rds(on) values. Verify pin-to-pin compatibility and ensure equivalent current handling capabilities for seamless replacement.

FDS6930AFDS6930A
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