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FDS6930A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 5.5A 8SOIC. Review the specifications below when checking this part for your BOM.
The FDS6930A is a dual N-channel Logic Level PowerTrench MOSFET from onsemi, housed in an 8-SOIC surface-mount package. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 5.5 A. The device has a maximum on-resistance (Rds(on)) of 32 mΩ and a power dissipation (Pd) of 2 W. Typical gate charge (Qg) is 460 pF at 15 V, with a threshold voltage of 1.5 V and a rise time of 8 ns.
Verify the specific manufacturer datasheet revision to confirm electrical characteristics and pinout compatibility before integration. Ensure that thermal management requirements align with the 2 W power dissipation rating under actual operating conditions. Cross-reference the 8-SOIC footprint dimensions against the target PCB layout to guarantee accurate assembly and soldering integrity.
Select this component when a dual N-channel solution is required in a small form factor. The 30 V rating suits low-voltage systems, while the 5.5 A current capacity supports moderate load switching. The logic-level threshold facilitates control by standard digital I/O pins without additional gate drive circuitry.
This part belongs to onsemi's PowerTrench family, designed for high-efficiency switching applications. The dual configuration allows for synchronized control or independent channel usage within space-constrained designs. It serves as a discrete alternative to integrated power switches in portable electronics and industrial control boards.
Direct substitutes include other dual N-channel MOSFETs in 8-SOIC packages with comparable 30 V ratings and similar Rds(on) values. Verify pin-to-pin compatibility and ensure equivalent current handling capabilities for seamless replacement.
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