FET, MOSFET Arrays FDS6990S product image

FDS6990S

$0.86
  • Description:MOSFET 2N-CH 30V 7.5A 8SOIC
  • Series:PowerTrench®

SKU:1d3abbd0a0bc Category: Brand:

  
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FDS6990S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2N-CH 30V 7.5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6990S

  • Description:MOSFET 2N-CH 30V 7.5A 8SOIC
  • Series:PowerTrench®
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7.5A (Ta)
  • Rds On (Max) @ Id, Vgs:22mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1233pF @ 15V
  • Power - Max:900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS6990S

FDS6990S

FET, MOSFET Arrays Overview

The FDS6990S is a dual N-channel PowerTrench SyncFET designed for synchronous DC-DC power supplies. It integrates two MOSFETs and Schottky diodes in an SO-8 package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V, continuous drain current (Id) of 7.5 A, and on-resistance (Rds(on)) of 17 mΩ at Vgs=10 V. Gate charge (Qg) is 14 nC, with threshold voltage (Vgs(th)) of 1 V. Operating temperature range is -55°C to +150°C, with power dissipation of 2 W.

FET, MOSFET Arrays Feature Summary

  • Integrates dual N-channel MOSFETs with monolithic Schottky diodes using SyncFET technology
  • Optimized for low gate charge and high power conversion efficiency
  • Designed to replace discrete MOSFET and Schottky diode combinations

FET, MOSFET Arrays Applications

  • Synchronous rectification in DC-DC converters
  • Low-side switching in power supply circuits
  • Power management modules requiring compact dual-FET solutions

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or manufacturer channels. Confirm RoHS compliance status via official datasheets. Check obsolescence notices as the part may be discontinued. Validate package markings against original Fairchild Semiconductor specifications. Ensure storage conditions meet semiconductor handling standards.

FET, MOSFET Arrays Selection Notes

Select based on 30V rating and 7.5A current capacity requirements. Consider Rds(on) performance at specific gate voltages for efficiency optimization. Evaluate thermal management needs given 2W power dissipation limit. Verify compatibility with control circuitry driving the gate signals. Assess space constraints for SO-8 footprint integration.

FET, MOSFET Arrays Part Context

Part of Fairchild's PowerTrench SyncFET family combining MOSFETs with integrated body diodes. Designed to simplify synchronous rectifier designs by reducing component count. Represents evolution from discrete MOSFET plus diode configurations toward integrated solutions.

FET, MOSFET Arrays Replacement Considerations

FDS6990AS serves as direct replacement with identical functionality. FDP6644S offers similar 30V N-channel characteristics but verify pinout compatibility. Cross-reference with ON Semiconductor equivalents after merger acquisition.

FDS6990SFDS6990S
$0.86
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