FDS89161LZ

FET, MOSFET Arrays Overview

The FDS89161LZ is a dual N-channel PowerTrench MOSFET from onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 100 V and a continuous drain current (Id) of 2.7 A per channel. The device exhibits a maximum on-resistance (Rds(on)) of 105 mΩ at standard test conditions. Gate specifications include a threshold voltage (Vgs(th)) of 1.7 V and a total gate charge (Qg) of 5.3 nC. Switching performance includes rise and fall times of 10 ns. The component operates within a temperature range of -55°C to +150°C with a power dissipation rating of 31 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single SOIC-8 package for space-efficient circuit design.
• Shielded gate technology utilizing the PowerTrench architecture to optimize switching performance and reduce internal resistance.
• Logic-level gate drive capability supported by a low threshold voltage for compatibility with standard digital control signals.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring high-efficiency synchronous rectification
• Motor control systems utilizing low-voltage DC motors
• Power management modules for portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's official datasheet before procurement. Confirm that the SOIC-8 package dimensions match the target PCB footprint requirements. Ensure thermal management strategies account for the specified power dissipation limits under actual operating loads to maintain reliability within the stated temperature range.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required for 100 V applications with moderate current demands. The low gate charge facilitates faster switching speeds suitable for high-frequency converters. Evaluate the 105 mΩ on-resistance against thermal constraints to ensure junction temperatures remain within safe operating limits during continuous operation.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of shielded gate MOSFETs. The series focuses on minimizing on-resistance while maintaining robust switching characteristics. The FDS89161LZ specifically addresses the need for compact dual-channel solutions in consumer and industrial electronics where board space is limited.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 100 V rating, 2.7 A current capacity, and SOIC-8 package form factor. Verify that any alternative maintains comparable Rds(on) and switching speed parameters to preserve circuit performance.