FDS8928A

FET, MOSFET Arrays Overview

The FDS8928A is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a PowerTrench technology design in an SOIC-8 surface-mount package. Key electrical parameters include a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 5.5 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 30 mΩ at a gate-source voltage (Vgs) of 10 V. Operating characteristics specify a gate threshold voltage (Vgs(th)) of 2.1 V at 250 µA, with a total gate charge (Qg) of 7 nC at 5 V. Thermal performance includes a power dissipation rating of 2 W and an operating junction temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• PowerTrench technology optimized for low on-resistance
• Logic-level gate drive capability for direct interface with digital controllers

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification
• Load switching applications
• Power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead-free material declarations prior to integration into production assemblies. Cross-reference the component marking code with the latest factory documentation to validate authenticity and traceability.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within an SOIC-8 footprint. Ensure the application voltage remains below the 30 V drain-source limit. Verify that the thermal management strategy supports the 2 W power dissipation rating under expected load conditions. Check gate drive levels against the 2.1 V threshold requirement for reliable switching.

FET, MOSFET Arrays Part Context

This part belongs to the FDS89 series of dual MOSFETs from onsemi. It shares similar packaging and functional architecture with related models like the FDS8926A and FDS8949. These components are designed for general-purpose power switching tasks where board space is constrained. The series utilizes standard silicon planar technology for cost-effective performance.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs in SOIC-8 packages with comparable Vds and Rds(on) ratings. Verify pinout compatibility and thermal resistance values before substitution. Consult the manufacturer's cross-reference guide for officially validated alternative part numbers.