FET, MOSFET Arrays FDS8935 product image

FDS8935

$0.56
  • Description:MOSFET 2P-CH 80V 2.1A 8SOIC
  • Series:PowerTrench®

SKU:5db896161e66 Category: Brand:

  
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FDS8935 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 80V 2.1A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS8935

  • Description:MOSFET 2P-CH 80V 2.1A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:2.1A
  • Rds On (Max) @ Id, Vgs:183mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:879pF @ 40V
  • Power - Max:1.6W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS8935

FDS8935

FET, MOSFET Arrays Overview

The FDS8935 is a dual P-channel MOSFET array manufactured by onsemi, designed for surface-mount applications. It features an 8-SOIC package and operates with a drain-source voltage of 80 V. The device supports continuous currents of 2.1 A per channel and dissipates up to 1.6 W of power. Key electrical parameters include an on-resistance of 0.148 ohms and logic-level gate drive compatibility.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration within a single compact package
  • Logic-level gate drive capability for direct interface with digital control signals
  • Surface-mount design optimized for automated assembly processes

FET, MOSFET Arrays Applications

  • Low-side switching in battery-powered equipment
  • Load distribution circuits in portable devices
  • Power management modules requiring compact dual-switch solutions

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with standard shipping units defined by the manufacturer. Cross-reference the date code and lot number to ensure compliance with current production standards and quality certifications required for your supply chain.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in an 8-SOIC footprint. Ensure the application voltage does not exceed 80 V and that the load current remains within the 2.1 A limit. Verify that the logic level of the driving circuit matches the gate threshold requirements specified in the electrical characteristics table.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's MOSFET Arrays category, specifically designed for space-constrained designs requiring multiple switches. It serves as a compact alternative to discrete components, reducing board space and simplifying layout. The series focuses on efficiency and reliability for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult the official cross-reference list for verified substitutes. Ensure any replacement maintains the 80 V rating, 2.1 A current capacity, and SOIC-8 pinout compatibility. Verify thermal performance and gate charge characteristics match the original design requirements.

FDS8935FDS8935
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