FDS9926A

FET, MOSFET Arrays Overview

The FDS9926A is a dual N-channel MOSFET from onsemi's PowerTrench series, designed for power management applications with gate drive voltages ranging from 2.5 V to 10 V. It features a maximum drain-source voltage of 20 V and a continuous drain current of 6.5 A. The device offers a static drain-source on-resistance of 30 mΩ at VGS = 4.5 V and 43 mΩ at VGS = 2.5 V. Packaged in an SOIC-8 (CASE 751EB) surface-mount format, it supports a junction temperature range of -55°C to +150°C and provides a total gate charge of 6.2 nC.

FET, MOSFET Arrays Feature Summary

• Optimized for battery protection circuits
• Low gate charge characteristics
• Compatible with wide gate drive voltage ranges

FET, MOSFET Arrays Applications

• Battery Protection
• Load Switch
• Power Management

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and assembly details. Confirm RoHS compliance status directly with the supplier or datasheet revision notes before procurement. Ensure the component meets all environmental standards required for the intended deployment environment.

FET, MOSFET Arrays Selection Notes

Select this component when low on-resistance at reduced gate voltages is critical for system efficiency. Evaluate thermal resistance requirements based on the specific PCB copper pad area, as junction-to-ambient resistance varies significantly with mounting conditions. Verify that the application load current remains within the specified continuous and pulsed limits.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of N-channel MOSFETs. It utilizes advanced process technology optimized for low RDS(on) and fast switching speeds. The dual configuration allows for compact designs in bridge or high-side/low-side driver applications where space is constrained.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 20 V rating, 6.5 A current capacity, and SOIC-8 package. Verify pinout compatibility and electrical parameters such as RDS(on) and Qg to ensure equivalent performance in the existing circuit design without requiring layout changes.