FDS9953A

FET, MOSFET Arrays Overview

The FDS9953A is a dual P-Channel PowerTrench MOSFET from ON Semiconductor, optimized for power management applications requiring wide gate drive voltage ratings between 4.5V and 25V. It features a rugged gate design with a drain-source voltage of -30V and continuous drain current of -2.9A. The device offers low on-resistance of 130mΩ at VGS = -10V and 200mΩ at VGS = -4.5V, alongside a typical total gate charge of 2.5nC. Packaged in an SO-8 surface mount configuration, it supports junction temperatures from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-Channel configuration within a single compact package
• Optimized for wide gate drive voltage ranges (4.5V to 25V)
• High performance trench technology for extremely low RDS(ON)
• Low gate charge enabling fast switching speeds

FET, MOSFET Arrays Applications

• Power management circuits
• Load switch implementations
• Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify the exact part number nomenclature before ordering, as Fairchild Semiconductor integration may have updated naming conventions. Confirm that the specific reel size and tape width requirements match your manufacturing equipment specifications. Ensure compliance with RoHS standards and verify the operating temperature range aligns with your system's thermal design constraints.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-Channel solution is required for space-constrained designs. Consider its suitability for applications needing robust performance across varying gate drive voltages. Evaluate the thermal resistance characteristics against your board layout capabilities to ensure adequate heat dissipation under maximum load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family, known for advanced trench technology. Originally developed by Fairchild Semiconductor, it is now managed by ON Semiconductor following their acquisition. The product line focuses on high-efficiency power switching solutions utilizing silicon-based MOSFET structures.

FET, MOSFET Arrays Replacement Considerations

Check ON Semiconductor's official documentation for updated part numbers replacing older Fairchild designations containing underscores. Verify pinout compatibility and electrical parameter equivalence before substituting with other dual P-Channel MOSFETs.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the FDS9953A?

The maximum continuous drain current is ±2.9 A.

Does the FDS9953A support operation at elevated temperatures?

Yes, the operating and storage junction temperature range extends up to +150 °C.

What is the typical total gate charge for this device?

The typical total gate charge is 2.5 nC.