FET, MOSFET Arrays FDSS2407S_B82086 product image

FDSS2407S_B82086

$0.64
  • Description:MOSFET 2N-CH 62V 3.3A 8SOIC
  • Series:PowerTrench®

SKU:472fa073822b Category: Brand:

  
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FDSS2407S_B82086 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET 2N-CH 62V 3.3A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDSS2407S_B82086

  • Description:MOSFET 2N-CH 62V 3.3A 8SOIC
  • Series:PowerTrench®
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):62V
  • Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
  • Rds On (Max) @ Id, Vgs:110mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 15V
  • Power - Max:2.27W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDSS2407S_B82086

FDSS2407S_B82086

FET, MOSFET Arrays Overview

The FDSS2407S_B82086 is a dual N-channel MOSFET array manufactured by Fairchild Semiconductor. It features a drain-source voltage rating of 62V and a continuous drain current of 3.3A at ambient temperature. The device exhibits a maximum on-resistance of 110mΩ at 10V gate drive with 3.3A current. It is housed in an 8-SOIC surface-mount package, providing a thermal dissipation capacity of 2.27W at ambient conditions.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for compact power management solutions
  • Logic level gate operation for direct microcontroller interfacing
  • Integrated Schottky diode functionality within the array structure

FET, MOSFET Arrays Applications

  • Power management circuits requiring switching functions
  • Amplification applications in low-voltage systems
  • DC-DC converter topologies utilizing dual channel arrays

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix B82086 against official Fairchild Semiconductor documentation to confirm exact reel or tube packaging specifications. Ensure compatibility with RoHS directives if required by your manufacturing standards. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET array is required for space-constrained designs. The logic level gate threshold facilitates control from standard 3.3V or 5V logic sources. Consider the 8-SOIC package dimensions and thermal resistance characteristics relative to the PCB copper area available for heat dissipation during high-current operation.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench series of MOSFETs, designed for efficient switching performance. As a dual array, it consolidates two independent N-channel devices into a single footprint, reducing board space compared to discrete components. The technology leverages advanced planar strip architecture for optimized on-resistance and switching speeds.

FET, MOSFET Arrays Replacement Considerations

Consult official Fairchild Semiconductor substitution guides for verified equivalents. Generic replacements must match the 62V rating, 3.3A current capability, and 8-SOIC package outline. Verify pinout compatibility and thermal characteristics before implementing any alternative part numbers in existing designs.

FDSS2407S_B82086FDSS2407S_B82086
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